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Strain Characterization of Advanced CMOS Transistors: An Industry Perspective

Published online by Cambridge University Press:  01 August 2018

Jiong Zhang
Affiliation:
Intel Corporation, Corporate Quality Network, Hillsboro, OR, USA
Xiaojun Weng
Affiliation:
Intel Corporation, Corporate Quality Network, Hillsboro, OR, USA
Renliang Yuan
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, USA
Ling Pan
Affiliation:
Intel Corporation, Corporate Quality Network, Hillsboro, OR, USA
Han Li
Affiliation:
Intel Corporation, Corporate Quality Network, Hillsboro, OR, USA
Markus Kuhn
Affiliation:
Intel Corporation, Corporate Quality Network, Hillsboro, OR, USA
Kevin Johnson
Affiliation:
Intel Corporation, Corporate Quality Network, Hillsboro, OR, USA
Jian-Min Zuo
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, USA
Zhiyong Ma
Affiliation:
Intel Corporation, Corporate Quality Network, Hillsboro, OR, USA

Abstract

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Type
Abstract
Copyright
© Microscopy Society of America 2018 

References

[1] Ghani, T, et al, IEDM 2003) p. 11.6.1.Google Scholar
[2] Thompson, S E, et al, IEEE Trans. Electron Devices 2004) p. 1790.Google Scholar
[3] Zhang, J, et al, Microsc. Microanal 2015) p. 2333.Google Scholar
[4] Kuhn, M, et al Metrology and Diagnostic Techniques for Nanoelectronics 2016) p. 207.Google Scholar