Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-17T02:31:44.029Z Has data issue: false hasContentIssue false
  • English
  • Français

Simulation analysis of 1250 kV HRTEM images for threading dislocations in GaN grown on sapphire

Published online by Cambridge University Press:  23 November 2012

H.S. Kim ,
S.H. Oh ,
K. Song ,
J.M. Yang  and
S.A. Song
H.S. Kim
Affiliation:
Kyung Sung University, Busan, Republic of Korea
S.H. Oh
Affiliation:
Pohang University of Science and Technology, Pohang, Republic of Korea
K. Song
Affiliation:
Pohang University of Science and Technology, Pohang, Republic of Korea
J.M. Yang
Affiliation:
National Nanofab Center, Daejeon, Republic of Korea
S.A. Song
Affiliation:
Samsung Advanced Institute of Technology, Yongin, Republic of Korea
Get access

Abstract

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Type
Research Article
Information
Microscopy and Microanalysis , Volume 18 , Issue S2: Proceedings of Microscopy & Microanalysis 2012 , July 2012 , pp. 1752 - 1753
Copyright
Copyright © Microscopy Society of America 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)