Hostname: page-component-76fb5796d-vvkck Total loading time: 0 Render date: 2024-04-27T10:46:21.429Z Has data issue: false hasContentIssue false
  • English
  • Français

Photo-Electron Emission Microscopy of Semiconductor Surfaces

Published online by Cambridge University Press:  02 July 2020

R.J. Nemanich ,
S.L. English ,
J.D. Hartman ,
W. Yang ,
H. Ade  and
R.F. Davis
R.J. Nemanich
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC27695-8202
S.L. English
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC27695-8202
J.D. Hartman
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC27695-8202
W. Yang
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC27695-8202
H. Ade
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC27695-8202
R.F. Davis
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC27695-8202
Get access

Extract

The technique of photo-electron emission microscopy (PEEM) is based on imaging of photo excited electrons from a surface. Typically ultra violet (UV) light above the work function of a metal will cause electrons to be emitted from a surface. Since photo excited electrons originate very near to the surface, they essentially reflect the electronic structure of the surface. These electrons may be accelerated and imaged, and the image will reflect the properties of the surface.

While the PEEM technique has been understood in a basic sense for many years, it has been limited by the lack of high intensity UV light sources. The most crucial part of the electron imaging system for PEEM, the objective lens, is essentially the same as for the sister technique of low energy electron microscopy (LEEM), and advances in electron optics capabilities have been exploited both for LEEM and for PEEM.

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 606 - 607
Copyright
Copyright © Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

1.Mundschau, M., Bauer, E. and Swiech, W., Surf. Sci. 203, 412–422 (1988).CrossRefGoogle Scholar
2.Telieps, W. and Bauer, E., Surf. Sci. 200, 512 (1988).CrossRefGoogle Scholar
3.Rempfer, G.F., Skoczylas, W.P. and Griffith, O.H., Ultramicroscopy 36, 196–221 (1991).CrossRefGoogle Scholar