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Opportunities of in situ TEM for measuring voltage-driven microstructural changes in memristive devices

Published online by Cambridge University Press:  30 July 2021

Frances Ross
Affiliation:
MIT, United States
Baoming Wang
Affiliation:
Massachusetts Institute of Technology, Cambridge, Massachusetts, United States
Teodor Todorov
Affiliation:
IBM T. J. Watson Research Center, United States
John Rozen
Affiliation:
IBM T. J. Watson Research Center, United States

Abstract

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Type
Investigating Phase Transitions in Functional Materials and Devices by In Situ/Operando TEM
Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

References

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This work was partially supported by the MIT-IBM Watson AI Lab and made use of facilities and instrumentation supported by NSF through the Massachusetts Institute of Technology Materials Research Science and Engineering Center DMR-1419807, as well as facilities at MIT.nano.Google Scholar