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Nanoscale Lead Inclusions in Silicon

Published online by Cambridge University Press:  02 July 2020

E. Johnson ,
A. Johansen ,
V.S. Touboltsev ,
L. Sarholt  and
U. Dahmen
E. Johnson
Affiliation:
Ørsted Laboratory, Niels Bohr Institute, Universitetsparken 5, DK-2100, Copenhagen Ø, Denmar
A. Johansen
Affiliation:
Ørsted Laboratory, Niels Bohr Institute, Universitetsparken 5, DK-2100, Copenhagen Ø, Denmar
V.S. Touboltsev
Affiliation:
Ørsted Laboratory, Niels Bohr Institute, Universitetsparken 5, DK-2100, Copenhagen Ø, Denmar
L. Sarholt
Affiliation:
Ørsted Laboratory, Niels Bohr Institute, Universitetsparken 5, DK-2100, Copenhagen Ø, Denmar
U. Dahmen
Affiliation:
National Center for Electron Microscopy, LBNL, UC Berkeley, CA94720, USA.
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Extract

TEM analyses of Si implanted with immiscible elements have shown that the implanted species characteristically segregate to form nanoscale inclusions in the amorphous Si matrix. Subsequen annealing induced recrystallization was found to lead to simultaneous removal of nearly all of the implanted species, explained in terms of stress-induced trapping of the implanted atoms at the amc phous/crystalline interface as it progresses towards the surface.

The solubility of Pb in Si is negligible, and it has previously been shown-that elemental nanoscale inclusions can be formed in Si either by ion implantation at elevated temperature or by rapid solidi cation. In the present work single crystals of <110> Si have been implanted with 80 keV Pb+ k at 300K, 625K and 925K respectively. The implanted fluence was 8-1019 m−2 corresponding to an average concentration of about 3 at.%. Combined TEM and RBS/channeling analysis showed that implantations at 300 K and 625 K induced amorphization of the implanted layer with dense distributions of nanoscale lead inclusions embedded in the amorphous silicon matrix (fig. 1).

Type
Irradiation and Implantation Effects in Materials
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 762 - 763
Copyright
Copyright © Microscopy Society of America

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References

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6. This work is supported by the Director, Office of Energy Research, Office of Basic Energy Sciences, Materials Sciences Division of the U.S. Department of Energy under Contract No. DEACO3- 76SFOOO98 and by the Danish Natural Sciences Research Council.Google Scholar