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Microscale Elemental Imaging of Semiconductor Materials Using Focused Ion Beam Sims

Published online by Cambridge University Press:  02 July 2020

F. A. Stevie ,
S. W. Downey ,
S. Brown ,
T. Shofner ,
M. Decker ,
T. Dingle  and
L. Christman
F. A. Stevie
Affiliation:
lucent Technologies, 9333 S. John Young Parkway, Orlando, FL32819
S. W. Downey
Affiliation:
lucent Technologies, 9333 S. John Young Parkway, Orlando, FL32819
S. Brown
Affiliation:
lucent Technologies, 9333 S. John Young Parkway, Orlando, FL32819
T. Shofner
Affiliation:
Kirk Resources, 9333 S. John Young Parkway, Orlando, FL32819
M. Decker
Affiliation:
Kirk Resources, 9333 S. John Young Parkway, Orlando, FL32819
T. Dingle
Affiliation:
FEI Europe Limited, Cottenham, Cambridge, England
L. Christman
Affiliation:
FEI Company, 7451 Evergreen Parkway, Hillsboro, FL97124
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Extract

The semiconductor industry demands elemental information from ever smaller regions. Two types of information in demand are two dimensional dopant profiles for the MOS transisitor and identification of particles as small as 30 nm diameter. The work of Levi-Setti and others resulted in liquid metal ion source (LMIS) instruments that provided secondary ion mass spectrometry (SIMS) images using Ga+ beams with 20 nm lateral resolution. It is now possible to purchase focused ion beam (FIB) systems with 5 nm beam capability and SIMS detection.

The application of LMIS SIMS to meet semiconductor demands has been pursued in our laboratory with a FEI-800 FIB. SIMS imaging of semiconductor patterns after etch has shown the ability to identify boron and carbon contamination. Figure 1 shows boron in a comb structure after a BC13 etch. The boron can be shown to be removed by a cleaning step.

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 650 - 651
Copyright
Copyright © Microscopy Society of America

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References

1. Levi-Setti, R., et al., Secondary Ion Mass Spectrometry, SIMS V, A. Benninghoven et al.,eds., Springer-Verlag, Berlin (1986)132.CrossRefGoogle Scholar

2. Downey, S. W. et al., Secondary Ion Mass Spectrometry, SIMS XI, Gillen, G. et al., eds., Wiley, Chichester (1998) in press.Google Scholar

3. Montgomery, N. J., et al., ibid.Google Scholar

4. Schueler, B. W., et al., ibid.Google Scholar