Hostname: page-component-5c6d5d7d68-pkt8n Total loading time: 0 Render date: 2024-08-07T01:37:05.384Z Has data issue: false hasContentIssue false

Measuring Strain Fields surrounding Grain-Boundary Dislocations in Silicon using Scanning Transmission Electron Microscopy

Published online by Cambridge University Press:  27 August 2014

Martin Couillard*
Affiliation:
National Research Council Canada, Energy, Mining and Environment Portfolio, 1200 Montreal rd., Ottawa ON, K1A0R6, Canada

Abstract

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Copyright
Copyright © Microscopy Society of America 2014 

References

[1] Hytch, M.J., Snoeck, E. and Kilaas, R. Ultramicroscopy 74 (1998),p. 131.Google Scholar
[2] Muller, D.A. Nature Materials 8 (2009), p. 263.Google Scholar
[3] Couillard, M., Radtke, G., Knights, A.P. and Botton, G.A. Phys. Rev. Lett. 107 (2011), 186104.Google Scholar
[4] Radtke, G., Couillard, M., Botton, G.A., Zhu, D. and Humphreys, C.J. Appl. Phys. Lett. 100 (2012), 011910.Google Scholar
[5] Couillard, M., Radtke, G. and Botton, G.A. Phil. Mag 93 (2013), p. 1250.Google Scholar