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Measurement and Mapping of Small Changes of Crystal Orientation by Electron Backscattering Diffraction

Published online by Cambridge University Press:  07 July 2005

Xiaodong Tao
Affiliation:
Department of Materials Science and Engineering, Lehigh University, Bethlehem, PA 18015-3198, USA
Alwyn Eades
Affiliation:
Department of Materials Science and Engineering, Lehigh University, Bethlehem, PA 18015-3198, USA
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Abstract

We have explored the possibility of measuring small changes of orientation within grains by electron backscattering diffraction (EBSD), in the scanning electron microscope. Conventional orientation maps (using EBSD) index the orientation of each position on the sample separately. This does not give accurate results for small differences of orientation. We have studied methods of measuring small changes in orientation by measuring the change from one EBSD pattern to the next directly, without indexing either. Previous workers have measured the change of position of a zone axis in the EBSD pattern. We have compared this with an alternative method, which we show to be superior, of measuring the shift of the peaks in the Hough transform from one diffraction pattern to the next. This means that we are measuring the change of orientation of sets of crystal planes within the grain, rather than measuring the change of orientation of zone axes. We show that it is possible, with a standard EBSD configuration, to measure the shift of the Kikuchi bands to a precision of about a 10th of a pixel, which corresponds to a change of orientation in the sample of about 0.1 mrad (0.006°).

Type
TECHNIQUES FOR MICROSCOPY AND MICROANALYSIS
Copyright
© 2005 Microscopy Society of America

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References

REFERENCES

Dingley, D.J. & Randle, V. (1992). Microtexture determination by electron back-scatter diffraction. J Mater Sci 27, 45454566.Google Scholar
Foroosh, H., Zerubia, J., & Berthord, M. (2002). Extension of phase correlation to sub-pixel resolution. IEEE Trans Image Process 11, 188200Google Scholar
Krieger Lassen, N.C., Jensen, D.J., & Conradson, K. (1992). Image processing procedures for analysis of electron backscattering patterns. Scan Microsc 6, 115121.Google Scholar
Michael, J.R. (2000). Phase identification using electron backscatter diffraction in the scanning electron microscope. In Electron Backscatter Diffraction in Materials Science, Schwartz, A.J., Kumar, M. & Adams, B.L. (Eds.), pp. 7589. New York: Kluwer Academic/Plenum Publishers.
Tao, X. (2004). An EBSD Study on Mapping of Small Orientation Differences in Lattice Mismatched Heterostructures. Ph.D. dissertation, Lehigh University.
Tao, X. & Eades, A. (2001). A routine to determine the shift of Kikuchi bands in EBSP to subpixel resolution. Microsc Microanal 7(Suppl. 2), 366367.Google Scholar
Tao, X. & Eades, A. (2005). Errors, artifacts, and improvements in EBSD processing and mapping. Microsc Microanal 11, 7987.Google Scholar
Troost, K.Z., van der Sluis, P., & Gravesteijn, D.J. (1993). Microscale elastic strain determination by backscatter Kikuchi diffraction in the scanning electron microscope. Appl Phys Lett 62, 11101112.Google Scholar
Wilkinson, A.J. (1996). Measurement of elastic strains and small lattice rotation using electron back scatter diffraction. Ultramicroscopy 62, 237247.Google Scholar
Wilkinson, A.J. (2000). Advances in SEM-based diffraction studies of defects and strains in semiconductors. J Electron Microsc 49, 299311.Google Scholar
Young, I.T. & van Vliet, L.I. (1995). Recursive implementation of the Gaussian filter. Signal Process 44, 139151.Google Scholar