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Material Dependence of Sputtering Behavior During Focused Ion Beam Milling: A Correlation Between Monte Carlo Based Simulation and Empirical Observation

Published online by Cambridge University Press:  02 July 2020

B.I. Prenitzer ,
L.A. Giannuzzi ,
S.R. Brown ,
R.B. Irwin ,
T.L. Shofner  and
F. A. Stevie
B.I. Prenitzer
Affiliation:
Department of Mechanical, Materials, and Aerospace Engineering, University of Central Florida, PO Box 162450, 4000 Central Florida Blvd., Orlando, FL32816-2450
L.A. Giannuzzi
Affiliation:
Department of Mechanical, Materials, and Aerospace Engineering, University of Central Florida, PO Box 162450, 4000 Central Florida Blvd., Orlando, FL32816-2450
S.R. Brown
Affiliation:
Cirent Semiconductor, 9333 S. John Young Parkway, Orlando, FL32819
R.B. Irwin
Affiliation:
Cirent Semiconductor, 9333 S. John Young Parkway, Orlando, FL32819
T.L. Shofner
Affiliation:
Kirk Resources, 9333 S. John Young Parkway, Orlando, FL32819
F. A. Stevie
Affiliation:
Cirent Semiconductor, 9333 S. John Young Parkway, Orlando, FL32819
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Extract

The focused ion beam (FIB) lift-out method is a high precision technique by which site-specific cross-section transmission electron microscopy (TEM) specimens may be rapidly prepared from virtually any material. The technique is particularly useful when the sample geometry or composition is complex (e.g., fibers, powders, composites and interfaces). In addition to the preparation of TEM specimens, FIB milling has also found widespread utility in micromachining and microfabrication applications as well as specimen preparation for scanning electron microscopy (SEM) and secondary ion mass spectrometry (SIMS).

As the applications of the FEB instrument continue to become more universally recognized, the need to understand the interrelationships between the target material, processing parameters, and process efficiency of the milling phenomena becomes more critical. Incident ion attack angle, target material stopping efficiency and sputtering yield, Y, are important variables governing the milling process. TRIM, a binary collision approximation Monte Carlo simulation code, is used to physically model variables that influence FIB sputtering behavior.

Type
Specimen Preparation
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 858 - 859
Copyright
Copyright © Microscopy Society of America

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References

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8. This work was made possible through the generous support of Cirent Semiconductor and a Department of Defense NDSEG fellowship, contract number P-34862-RT-NDF.Google Scholar