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Interfaces and Defects in Opto-Electronic Semiconductor Films Studied by Atomic Resolution STEM

Published online by Cambridge University Press:  02 July 2020

Y. Xin
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN37381-6031, USA Department of Physics, University of Illinois at Chicago, ChicagoIL60607-7059, USA.
DJ. Wallis
Affiliation:
Department of Physics, University of Illinois at Chicago, ChicagoIL60607-7059, USA.
N.D. Browning
Affiliation:
Department of Physics, University of Illinois at Chicago, ChicagoIL60607-7059, USA.
S. Sivananthan
Affiliation:
Department of Physics, University of Illinois at Chicago, ChicagoIL60607-7059, USA.
S.J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN37381-6031, USA
C.J. Humphreys
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, CB2 3QZUK
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Extract

The growth of thin films on dissimilar substrates is of great technological importance for modern optoelectronic devices. However, device applications are currently limited by lattice mismatches between the film and substrate that invariably lead to defects detrimental to device performance. It is therefore of key importance that the mechanisms leading to the formation of these defects are understood on the fundamental atomic level. Correlated atomic resolution Z-contrast imaging and EELS in the STEM is a unique methodology by which this information can be obtained. In this paper, the application of this methodology to determine a novel graphoepitaxial growth mechanism for CdTe on (001)Si is demonstrated, and its potential for the study of GaN is discussed.

Fig.la shows a high resolution Z-contrast image of a cross sectional view of the CdTe/Si interface showing clearly the CdTe and Si dumbbells. Due to the differences in atomic number, the location of the interface is clear.

Type
Recent Developments in Microscopy for Studying Electronic and Magnetic Materials
Copyright
Copyright © Microscopy Society of America 1997

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References

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5. This research was sponsored by the Division of Materials Sciences, USDOE, under contract DE-AC05-96OR22464 with Lockheed Martin Energy Research Corporation, in part by DOE under grant number DOE 96ER45610.Google Scholar