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Innovative Grounding Methodology for Epoxy Impregnated Semiconductor Cross Sections for Electron Microscopy Inspection
Published online by Cambridge University Press: 30 July 2020
Abstract
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- Type
- Advances in Electron Microscopy to Characterize Materials Embedded in Devices
- Information
- Copyright
- Copyright © Microscopy Society of America 2020
References
Khatkhatay, F. et al. A Simple Method to Decouple Redeposition-Related Artifacts from Real Defects in the Failure Analysis of Silicon Photonics Modules. M&M 2019, 726–727.Google Scholar
Frank, L., et al. Scanning Electron Microscopy of Nonconductive Specimens at Critical Energies in a Cathode Lens System. Scanning. 23. 36–50. 10.1002/sca.4950230106.10.1002/sca.4950230106CrossRefGoogle Scholar
The authors would like to thank Jeremy Brundige for the mechanical cross section and imagingGoogle Scholar