Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-07-01T06:03:45.814Z Has data issue: false hasContentIssue false

Innovative Grounding Methodology for Epoxy Impregnated Semiconductor Cross Sections for Electron Microscopy Inspection

Published online by Cambridge University Press:  30 July 2020

Frieder Baumann
Affiliation:
Globalfoundries, Inc., Malta, New York, United States
Pradip Sairam Pichumani
Affiliation:
Globalfoundries, Inc., Malta, New York, United States
Christopher Torcedo
Affiliation:
Globalfoundries, Inc., Malta, New York, United States

Abstract

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Advances in Electron Microscopy to Characterize Materials Embedded in Devices
Copyright
Copyright © Microscopy Society of America 2020

References

Khatkhatay, F. et al. A Simple Method to Decouple Redeposition-Related Artifacts from Real Defects in the Failure Analysis of Silicon Photonics Modules. M&M 2019, 726727.Google Scholar
Frank, L., et al. Scanning Electron Microscopy of Nonconductive Specimens at Critical Energies in a Cathode Lens System. Scanning. 23. 3650. 10.1002/sca.4950230106.10.1002/sca.4950230106CrossRefGoogle Scholar
The authors would like to thank Jeremy Brundige for the mechanical cross section and imagingGoogle Scholar