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In Situ HREm of Reactions at Interfaces

Published online by Cambridge University Press:  02 July 2020

R. Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California94305
T. Itoh
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California94305
H. J. Lee
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California94305
K. W. Kwon
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California94305
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Extract

Reactions at solid-solid interfaces are important both scientifically and technologically. Firstly, there is quite a wide variety of possibilities. Materials can react with one another, forming equilibrium, meta-stable or even amorphous phases. The interface can provide a means to promote phase reactions kinetically, in an analogous manner to catalysis. Even when the materials are mutually compatible chemically, the interface topography and atomic structure can evolve over the course of time. From the practical point-of-view, changes in the interface chemistry and structure can profoundly alter the physical properties. This is especially notable in thin film technology, whereby the interfaces constitute a signigicant proportion of the whole device. In this article, contributions to understanding this field are illustrated through application of in situ and high-resolution electron microscopy (HREM).

Basic studies of metal-semicoductor interfacial reactions have been successfully carried out for a number of years. of increasing importance in microelectronics is the stability of layers which prevent chemical interaction, namely the diffusion barriers.

Type
Atomic Structure and Mechanisms at Interfaces in Materials
Copyright
Copyright © Microscopy Society of America 1997

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References

Lee, H. J. and Sinclair, R., these proceedings.Google Scholar
Holloway, K.et al., J. Vac. Sei. Technol. A7(1989)1479.10.1116/1.576081CrossRefGoogle Scholar
Sinclair, R. and Konno, T. J., Ultramisc. 56(1994)225.10.1016/0304-3991(94)90162-7CrossRefGoogle Scholar
Heyzelden, C.et al., Appl. Phys. Lett. 60(1992)225.10.1063/1.106971CrossRefGoogle Scholar
Konno, T. J. and Sinclair, R., Acta. Metall. Mater. 43(1995)471.10.1016/0956-7151(94)00289-TCrossRefGoogle Scholar
Itoh, T. and Sinclair, R., Mats. Res. Soc. Symp. Proc. 349(1994)31.10.1557/PROC-349-31CrossRefGoogle Scholar
Itoh, T. and Sinclair, R., Mats. Res. Soc. Symp. Proc. 382(1995)45.10.1557/PROC-382-45CrossRefGoogle Scholar