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In Situ Atomic Force Microscopy Depth-Corrected Three-Dimensional Focused Ion Beam Based Time-of-Flight Secondary Ion Mass Spectroscopy: Spatial Resolution, Surface Roughness, Oxidation

Published online by Cambridge University Press:  23 November 2020

Lex Pillatsch ,
Szilvia Kalácska Open the ORCID record for Szilvia Kalácska [Opens in a new window] ,
Xavier Maeder  and
Johann Michler
Lex Pillatsch
Affiliation:
Empa, Swiss Federal Laboratories for Materials Science and Technology, Laboratory of Mechanics of Materials and Nanostructures, Thun CH-3602, Switzerland TOFWERK AG., Thun CH-3600, Switzerland
Szilvia Kalácska*
Affiliation:
Empa, Swiss Federal Laboratories for Materials Science and Technology, Laboratory of Mechanics of Materials and Nanostructures, Thun CH-3602, Switzerland
Xavier Maeder
Affiliation:
Empa, Swiss Federal Laboratories for Materials Science and Technology, Laboratory of Mechanics of Materials and Nanostructures, Thun CH-3602, Switzerland
Johann Michler
Affiliation:
Empa, Swiss Federal Laboratories for Materials Science and Technology, Laboratory of Mechanics of Materials and Nanostructures, Thun CH-3602, Switzerland
*
*Author for correspondence: Szilvia Kalácska, E-mail: szilvia.kalacska@empa.ch
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Abstract

Atomic force microscopy (AFM) is a well-known tool for studying surface roughness and to collect depth information about features on the top atomic layers of samples. By combining secondary ion mass spectroscopy (SIMS) with focused ion beam (FIB) milling in a scanning electron microscope (SEM), chemical information of sputtered structures can be visualized and located with high lateral and depth resolution. In this paper, a high vacuum (HV) compatible AFM was installed in a TESCAN FIB-SEM instrument that was equipped with a time-of-flight SIMS (ToF-SIMS) detector. To calibrate the sputtering rate and measure the induced roughness caused by the ToF-SIMS analysis, subsequent AFM measurements were performed on an inorganic multilayer vertical cavity surface-emitting laser sample. Normalized sputtering rates were used to aid the accurate three-dimensional reconstruction of the sputtered volume's chemical composition. Achievable resolution, surface roughness during sputtering, and surface oxidation issues were analyzed. The integration of complementary detectors opens up the ability to determine the sample properties as well as to understand the influence of the Ga+ ion sputtering method on the sample surface during the analysis.

Keywords

atomic force microscopy (AFM)chemical characterizationdepth profilingfocused ion beam (FIB)time-of-flight secondary ion mass spectroscopy (ToF-SIMS)
Type
Software and Instrumentation
Information
Microscopy and Microanalysis , Volume 27 , Issue 1 , February 2021 , pp. 65 - 73
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Copyright
Copyright © The Author(s), 2020. Published by Cambridge University Press on behalf of the Microscopy Society of America

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