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Imaging Cultured Cells on Protein Coated Silicon Chips Using Low-Voltage in-Lens SEM

Published online by Cambridge University Press:  02 July 2020

R. P. Apkarian  and
S. Lund
R. P. Apkarian
Affiliation:
Integrated SEM and Microanalytical Facility, Emory University, Atlanta, GA30322
S. Lund
Affiliation:
Integrated SEM and Microanalytical Facility, Emory University, Atlanta, GA30322
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Extract

A Schottky Field Emission (SFE) SEM (Topcon DS-130F) equipped with dual stages and dual secondary electron (SE) detectors operated at high voltage (25 kV) provided useful magnifications of 200 x - 200,000 x and particle resolution in the 5 nm range from chromium (Cr) coated bulk (1 mm3) biological samples. Additionally, high voltage in-lens SFE-SEM, at magnifications > 200,000 x, provided high resolution images with 2-3 nm particle contrasts from Cr coated negatively-stained phospholipid vesicles (100 nm diameter) adhered to uncoated silicon (Si) chips.

We recently developed low voltage strategies for quality in-lens imaging of Cr coated cell cultures at low and high magnifications. Due to unfavorable specimen-beam interactions at high voltage, not encountered with ultimately small volume organic specimens on Si chips or large bulk specimens, cells on protein matrix coated Si chips were imaged at low and high magnification in-the-lens of the DS-130F with beam energies of 5 kV.

Type
Low Voltage SEM Imaging and Analysis for the Biological and Materials Sciences
Information
Microscopy and Microanalysis , Volume 3 , Issue S2: Proceedings: Microscopy & Microanalysis '97, Microscopy Society of America 55th Annual Meeting, Microbeam Analysis Society 31st Annual Meeting, Histochemical Society 48th Annual Meeting, Cleveland, Ohio, August 10-14, 1997 , August 1997 , pp. 1229 - 1230
Copyright
Copyright © Microscopy Society of America 1997

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References

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