Hostname: page-component-77c89778f8-fv566 Total loading time: 0 Render date: 2024-07-21T19:25:42.975Z Has data issue: false hasContentIssue false

Image Simulation and Analysis to Predict the Sensitivity Performance of a Multi-Electron Beam Critical Dimension Metrology Tool

Published online by Cambridge University Press:  04 August 2017

Maseeh Mukhtar
Affiliation:
Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY.
Brad Thiel
Affiliation:
Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY.

Abstract

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Copyright
© Microscopy Society of America 2017 

References

[1] Bunday, B. “HVM Metrology Challenges towards the 5 nm Node”, Metrology, Inspection, and Process Control for Microlithography XXX, Proc. SPIE 9778.Google Scholar
[2] Mukhtar, M., et al, Microsc. Microanal. 22(Suppl 3 2016). p. 620.Google Scholar
[3] Mukhtar, M., et al, J. Micro/Nanolith. MEMS MOEMS 15(3 2016). p. 034004.Google Scholar