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Hrem Observation of the Relaxation of Grain Boundaries in Au At Their Intersection with Free Surfaces

Published online by Cambridge University Press:  02 July 2020

T. Radetic  and
U. Dahmen
T. Radetic
Affiliation:
National Center for Electron Microscopy, LBNL, University of California, Berkeley, CA, USA
U. Dahmen
Affiliation:
National Center for Electron Microscopy, LBNL, University of California, Berkeley, CA, USA
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Abstract

Grain boundaries in fee metals with low stacking fault energy are known to undergo extended relaxations that can at times lead to a thin layer of a different structure. in Cu, for example, it has been found that Σ3{112}} boundaries relax into a 9R phase or even a bec phase. in this work, we have used high resolution electron microscopy to investigate the atomic structure of Σ99 grain boundaries in mazed bicrystal films of Au. On {001} Ge single crystal substrates, Au bicrystals can be grown in two equivalent {110} orientation variants, related to each other by a 90° rotation about the surface normal. There is equal probability to nucleate either orientation variant in early stages of film formation and since there is no reason for preferential growth, the morphology of the bicrystal film consists of many grains in only two orientations. All grain boundaries are of the type Σ99 and display tilt character.

Thin films 10-200nm thick were grown by physical vapor deposition on {001} Ge substrate at 280°C and followed by annealing at 200°C to relieve stresses.

Type
Quantitative Transmission Electron Microscopy of Interfaces (Organized by M. Rüehle, Y. Zhu and U. Dahmen)
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 278 - 279
Copyright
Copyright © Microscopy Society of America 2001

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References

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