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HREM Analysis of ∑3 ﹛112﹜ Tilt Grain Boundaries in Au Bicrystals Observed in < 111 > Projection

Published online by Cambridge University Press:  02 July 2020

C.J.D. Hetherington
Affiliation:
University of Sheffield, Dept. of Electronic and Electrical Engineering
U. Dahmen
Affiliation:
National Center for Electron Microscopy, LBNL, University of California, Berkeley, CA, USA
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Grain boundaries in fee metals with low stacking fault energy are known to undergo extended relaxations that can at times lead to a thin layer of a different structure. In Cu, for example, it has been found that ∑3﹛ 112﹜ boundaries relax into a 9R phase [1]. In this work, we have used high resolution electron microscopy to investigate the atomic structure of ∑3 grain boundaries in mazed bicrystal films of Au. Using ﹛111﹜ Ge surfaces as a template, Au bicrystals can be grown in two orientation variants, related to each other by a 60° rotation about the surface normal. As described previously, such films have a strong tendency to facet onto the coherent twin plane parallel to the substrate [2], also known as “double positioning” [3]. If films are made very thin, the likelihood for such in-plane boundaries to lie in the foil decreases, and it becomes possible to observe the atomic structure of edge-on interfaces along <111>.

Type
High Resolution Electron Microscopy
Copyright
Copyright © Microscopy Society of America

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References

References:

1.Schmidt, C., Finnis, M.W., Ernst, F. and Vitek, V., Phil. Mag A77, 1161 (1998)CrossRefGoogle Scholar
2.Hetherington, C.J.D., Dahmen, U. and Penisson, J-M., MRS Symp. Proc. 466, 215, (1997)CrossRefGoogle Scholar
3.Pashley, D.W., Stowell, M. J., Jacobs, M.H. and Law, T.J., Phil. Mag. 10, 127, (1964).CrossRefGoogle Scholar
4. This work was supported by the Director, Office of Basic Energy Sciences, Materials Science Division, US Department of Energy, under contract DE-AC3-76SF00098 and the EPSRC, UKGoogle Scholar