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High Spatial Resolution Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography study of Indium segregation in N-polar InGaN Quantum Wells

Published online by Cambridge University Press:  04 August 2017

Massimo Catalano
Affiliation:
Department of Materials Science and Engineering, University of Texas, Richardson, TX Institute for Microelectronics and Microsystems, CNR-IMM, Via Monteroni, Lecce, Italy
Bastien Bonef
Affiliation:
Materials Department, University of California, Santa Barbara, CA, USA
Cory Lund
Affiliation:
Materials Department, University of California, Santa Barbara, CA, USA
Umesh K. Mishra
Affiliation:
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA
Stacia Keller
Affiliation:
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA
M. J. Kim
Affiliation:
Department of Materials Science and Engineering, University of Texas, Richardson, TX
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© Microscopy Society of America 2017 

References

[1] Keller, S., et al, Semicond. Sci. Technol. 29 2014). p. 113001.CrossRefGoogle Scholar
[2] Mehrtens, T. Applied Physics Letters 102(13 2013.CrossRefGoogle Scholar
[3] Rigutti, L., et al Scripta Materialia (2016).Google Scholar
[4] This work was supported in part by the Center for Low Energy Systems Technology (LEAST), one of the six SRC STARnet Centers, sponsored by MARCO and DARPA.Google Scholar
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High Spatial Resolution Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography study of Indium segregation in N-polar InGaN Quantum Wells
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