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Fluctuation Microscopy in the STEM

Published online by Cambridge University Press:  02 July 2020

P. M. Voyles  and
D. A. Muller
P. M. Voyles
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Ave., Murray Hill, NJ, 07974-0636
D. A. Muller
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Ave., Murray Hill, NJ, 07974-0636
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Abstract

Fluctuation microscopy is an electron microscopy technique sensitive to medium-range order (MRO) in disordered materials. It has been applied to study amorphous germanium and silicon, leading to the conclusion that these materials exhibit more MRO than the conventional continuous random network model for their structure.

As originally proposed by Treacy and Gibson, fluctuation microscopy utilizes mesoscopicresolution (1.5 nm) hollow-cone dark field (HCDF) imaging in a TEM. The normalized variance of such images,

is a measure of the magnitude of fluctuations in the diffracted intensity from mesoscopic volumes of the sample and is sensitive to MRO via the three- and four-body atom distribution functions. Studying V as a function of the diffraction vector magnitude k gives information about the degree of MRO and the internal structure of ordered regions. V as a function of the inverse resolution Q gives information about the characteristic MRO length scale.

Type
Quantitative Stem: Imaging and Eels Analysis Honoring the Contributions of John Silcox (Organized by P. Batson, C. Chen and D. Muller)
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 226 - 227
Copyright
Copyright © Microscopy Society of America 2001

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References

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