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Expanding the Depth of Field for Imaging with Low keV Electrons: High Resolution Surface Observations of Nanostructured LaB6 Using Low keV Secondary and Backscattered Electrons

Published online by Cambridge University Press:  04 August 2017

Takeshi Sunaoshi
Affiliation:
Hitachi High-Technologies Corp., Application Development Department, Ibaraki, Japan.
Satoshi Okada
Affiliation:
Hitachi High-Technologies Corp., Electron Microscope Systems Design 1st Dept., Ibaraki, Japan.
Kazutoshi Kaji
Affiliation:
Hitachi High-Technologies Corp., Electron Microscope Systems Design 1st Dept., Ibaraki, Japan.
Edgar Voelkl
Affiliation:
Hitachi High Technologies America, NSD, Clarksburg, Maryland, USA.
Roshini Ramachandran
Affiliation:
University of Georgia, Department of Chemistry, Athens, Georgia, USA.
Tina Salguero
Affiliation:
University of Georgia, Department of Chemistry, Athens, Georgia, USA. University of Georgia, Georgia Electron Microscopy, Athens, Georgia, USA.
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Abstract

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© Microscopy Society of America 2017 

References

[1] Sunaoshi, T, et al, Microsc. Microanal 22(S3 2016). p. 604.CrossRefGoogle Scholar
[2] Born, M & Wolf, E in Principles of Optics: Electromagnetic Theory. Cambridge Univ. Press.CrossRefGoogle Scholar
[3] Hovden, R, Xin, HL & Muller, DA Microscopy and Microanalysis 17(1 2011). p. 75.CrossRefGoogle Scholar
[4] Sato, M, et al, Nuclear Instruments and Methods in Physics Research A 519 2004). p. 280.CrossRefGoogle Scholar
[5] Special thanks to Dr. Eric Formo, Georgia Electron Microscopy, University of Georgia for assistance with sample preparation.Google Scholar
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Expanding the Depth of Field for Imaging with Low keV Electrons: High Resolution Surface Observations of Nanostructured LaB6 Using Low keV Secondary and Backscattered Electrons
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Expanding the Depth of Field for Imaging with Low keV Electrons: High Resolution Surface Observations of Nanostructured LaB6 Using Low keV Secondary and Backscattered Electrons
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