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Evaporation Dynamics of Boron Dopants in Silicon

Published online by Cambridge University Press:  30 July 2021

Jonathan Op de Beeck
Affiliation:
Imec, Kapeldreef 75, 3001 Leuven, Belgium, Quantum solid-state physics group, KU Leuven, Celestijnenlaan 200D, 3001Leuven, Belgium, Belgium
Christoph Freysoldt
Affiliation:
Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237Düsseldorf, Germany, United States
Ramya Cuduvally
Affiliation:
Imec, Kapeldreef 75, 3001 Leuven, Belgium,Quantum solid-state physics group, KU Leuven, Celestijnenlaan 200D, 3001Leuven, Belgium, United States
Jeroen Scheerder
Affiliation:
Imec, Kapeldreef 75, 3001 Leuven, Belgium, Leuven, Vlaams-Brabant, Belgium
Richard J. H. Morris
Affiliation:
Imec, Kapeldreef 75, 3001 Leuven, Belgium, Leuven, Vlaams-Brabant, Belgium
Paul van der Heide
Affiliation:
Imec, Kapeldreef 75, 3001Leuven, Belgium, United States
Wilfried Vandervorst
Affiliation:
Imec, Kapeldreef 75, 3001 Leuven, Belgium, Quantum solid-state physics group, KU Leuven, Celestijnenlaan 200D, 3001Leuven, Belgium, United States
Claudia Fleischmann
Affiliation:
Imec, Kapeldreef 75, 3001 Leuven, Belgium,Quantum solid-state physics group, KU Leuven, Celestijnenlaan 200D, 3001Leuven, Belgium, Belgium

Abstract

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Advanced Application of Atom Probe Tomography: Specimen preparation, Instrumentation, and Data analysis
Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

References

Da Costa, G., Wang, H., Duguay, S., Bostel, A., Blavette, D. & Deconihout, B. (2012). Advance in multi-hit detection and quantization in atom probe tomography. Review of Scientific Instruments 83, 123709.Google ScholarPubMed
Cuduvally, R., Morris, R. J. H., Ferrari, P., Bogdanowicz, J., Fleischmann, C., Melkonyan, D. & Vandervorst, W. (2020). Potential sources of compositional inaccuracy in the atom probe tomography of InxGa1-xAs. Ultramicroscopy 210, 112918.CrossRefGoogle Scholar
Martin, A. J. & Yatzor, B. (2019). Examining the Effect of Evaporation Field on Boron Measurements in SiGe: Insights into Improving the Relationship Between APT and SIMS Measurements of Boron. Microscopy and Microanalysis 25, 617624.Google ScholarPubMed
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