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Doping Properties and Phase Transition in Single-Layer MoS2

Published online by Cambridge University Press:  27 August 2014

Yung-Chang Lin ,
Dumitru O. Dumcenco ,
Hannu-Pekka Komsa ,
Yoshiko niimi ,
Arkady V. Krasheninnikov ,
Ying-Sheng Huang  and
Kazu Suenaga
Yung-Chang Lin
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan
Dumitru O. Dumcenco
Affiliation:
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
Hannu-Pekka Komsa
Affiliation:
Department of Physics, University of Helsinki, P.O. Box 43, Fl-00014 Helsinki, Finland
Yoshiko niimi
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan
Arkady V. Krasheninnikov
Affiliation:
Department of Physics, University of Helsinki, P.O. Box 43, Fl-00014 Helsinki, Finland
Ying-Sheng Huang
Affiliation:
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
Kazu Suenaga
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan

Abstract

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Abstract
Information
Microscopy and Microanalysis , Volume 20 , Supplement S3: Proceedings of Microscopy & Microanalysis 2014 , August 2014 , pp. 1750 - 1751
Copyright
Copyright © Microscopy Society of America 2014 

References

[1] Chlowalla, M., et al., Nat. Chem. 5 (2013)263-275.Google Scholar
[2] Wang, Q. H., et al, Nat. Nanotech. 7 (2012)699-712.Google Scholar
[3] Lin, Y. C, et al., Adv. Mater. in press, (2014).Google Scholar
[4] Lin, Y. C., et al., submitted, (2014).Google Scholar
[5] This research is supported by a JST Research Acceleration Program.Google Scholar