Hostname: page-component-848d4c4894-ttngx Total loading time: 0 Render date: 2024-05-12T01:54:23.532Z Has data issue: false hasContentIssue false
  • English
  • Français

Development of Ultra-thin TEM Lamella Preparation Technique and Its Application in Failure Analysis

Published online by Cambridge University Press:  30 July 2020

Yu Zhang ,
Brian Popielarski ,
Kevin Davidson ,
Long Men ,
Wayne Zhao  and
Frieder Baumann
Yu Zhang
Affiliation:
GLOBALFOUNDRIES US Inc., Malta, New York, United States
Brian Popielarski
Affiliation:
GLOBALFOUNDRIES US Inc., Malta, New York, United States
Kevin Davidson
Affiliation:
GLOBALFOUNDRIES US Inc., Malta, New York, United States
Long Men
Affiliation:
GLOBALFOUNDRIES US Inc., Malta, New York, United States
Wayne Zhao
Affiliation:
GLOBALFOUNDRIES US Inc., Malta, New York, United States
Frieder Baumann
Affiliation:
GLOBALFOUNDRIES US Inc., Malta, New York, United States

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Advances in Electron Microscopy to Characterize Materials Embedded in Devices
Information
Microscopy and Microanalysis , Volume 26 , Supplement S2 , August 2020 , pp. 1400 - 1402
Check for updates
Copyright
Copyright © Microscopy Society of America 2020

References

Engelmann, H. J., Saage, H., Zschech, E., “Application of analytical TEM for failure analysis of semiconductor device structures”, Microelectronics Reliability 40, 1747–1751 (2000)10.1016/S0026-2714(00)00107-4CrossRefGoogle Scholar
Giannuzzi, L. A., Stevie, F. A., “A review of focused ion beam milling techniques for TEM specimen preparation”, Micron 30, 197–204 (1999)10.1016/S0968-4328(99)00005-0CrossRefGoogle Scholar
Albarede, P. H., Lezec, H.J., “Transmission electron microscopy of focused ion beam induced damage at 50 keV in Si”, Electron Microscopy ICE M14, 431 (1998)Google Scholar
Hisamoto, D., Lee, W., Kedzierski, J., Takeuchi, H., Asano, K., Kuo, C., Anderson, E., King, T., Bokor, J., and Hu, C., “FinFET – A Self-Aligned Double-Gate MOSFET Scalable to 20nm”, IEEE Trans. Electron Devices 47, 2320 (2000)Google Scholar