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Cracking of GaN Based III-Nitride Heterostructures Grown by MOVPE on (0001)-6H-SiC

Published online by Cambridge University Press:  01 August 2002

A. Hasenkopf ,
F. Scholz  and
F. Phillipp
A. Hasenkopf
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstr. 3, 70569 Stuttgart, Germany Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart, Germany
F. Scholz
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstr. 3, 70569 Stuttgart, Germany
F. Phillipp
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstr. 3, 70569 Stuttgart, Germany

Abstract

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Information
Microscopy and Microanalysis , Volume 8 , Issue S02 , August 2002 , pp. 1202 - 1203
Copyright
Copyright © Microscopy Society of America 2002