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Compositional Characterization of an O-N-O Layer in a Dram Using FE-TEM and EDS Elemental Mapping

Published online by Cambridge University Press:  02 July 2020

M. Kawasaki ,
T. Oikawa ,
K. Ibe ,
K. H. Park ,
M. Shiojiri  and
M. Kersker
M. Kawasaki
Affiliation:
JEOL ltd., Akishima, Tokyo, 196-8558, Japan
T. Oikawa
Affiliation:
JEOL ltd., Akishima, Tokyo, 196-8558, Japan
K. Ibe
Affiliation:
JEOL ltd., Akishima, Tokyo, 196-8558, Japan
K. H. Park
Affiliation:
Texas Instrument Inc., 13570 North Central Expressway, MS3740, Dallas, TX, 75243
M. Shiojiri
Affiliation:
Kyoto Institute of Technology, Matsugasaki, Goshokaido, Sakyo, Kyoto 606, Japan
M. Kersker
Affiliation:
JEOL USA Inc., 11 Dearborn Road, Peabody, MA, 01960
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Extract

An O-N-O layer within a DRAM is designed to be an insulator between a single-crystal silicon substrate and a poly-crystalline silicon gate. The nominal structure of the layer is SiO2-Si3N4-SiO2. A small amount of phosphorus is doped in the poly-crystalline silicon gate to improve the electrical characteristics of the device. Transmission Electron Microscopy (TEM) was first used to view the micro structure in the layer. A bright field image gave clear contrast in the O-N-O layer, however, TEM images do not provide direct information about the elemental distribution. In this study X-ray elemental mapping was thus used to show this distribution.

The specimen was cut from a 16M-DRAM device and thinned using the cross-section ion milling method. The O-N-O layer was examined using a JEM-201 OF FE-(S)TEM equipped with a JEOL UTW-EDS detector. Fig. 1 shows a high resolution TEM image of the O-N-O layer.

Type
Compositional Mapping With High Spatial Resolution
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 146 - 147
Copyright
Copyright © Microscopy Society of America

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References

1.Park, K. H. et al., Phys. Conf. Ser. 146 (1995) 575Google Scholar
2.Goldstein, I. J. et al., in Joy, D. C., Romig, A. D. and Goldstein, J. I., Ed., Principles of Analytical Electron Microscopy, New York Plenum (1986) 191Google Scholar
3.Kondo, Y. et al., Proc. Ann Analytical EM Conference 8 (1992) 74Google Scholar
4.Hosokawa, F. et al., Proc. Ann Analytical EM Conference 3 (1987) 57Google Scholar