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Complementary Structural Information from Diffraction Patterns in STEM: Accurate Thickness Measurement with Pattern Matching

Published online by Cambridge University Press:  02 July 2020

J. M. Zuo  and
Y.F. Shi
J. M. Zuo
Affiliation:
Dept. of Materials Science and Engineering, University of Illinois at Urbana and Champaign, 1304 W. Green Street, Urbana, IL, 61801, USA Materials Research Laboratory, University of Illinois at Urbana and Champaign, 1304 W. Green Street, Urbana, IL, 61801, USA
Y.F. Shi
Affiliation:
Dept. of Materials Science and Engineering, University of Illinois at Urbana and Champaign, 1304 W. Green Street, Urbana, IL, 61801, USA
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Abstract

In this paper, we discuss the advantage of combining STEM imaging with diffraction. in addition, we present a set of accurately calculated convergent beam electron diffraction (CBED) patterns for Si, which highlights the sensitivity of electron diffraction to structure. The calculation takes the full account of crystal bonding by including known experimental structure factors in simulation. Such calculated patterns can be used for accurate determination of the sample thickness, crystal orientation and polarity (for acentric crystals). Calculations with and without crystal bonding show significant difference in calculated intensities, equivalent to a change in thickness about several nanometers for thick samples.

The annual dark field (ADF) imaging mode in scanning transmission electron microscopes offers the unique advantage of combining high-resolution electron imaging and spectroscopy with diffraction. The large cutoff angle used in ADF imaging allows simultaneous recording of diffraction patterns for quantitative structural information, while ADF imaging gives the precise position of the probe and the image of the sample.

Type
Quantitative Stem: Imaging and Eels Analysis Honoring the Contributions of John Silcox (Organized by P. Batson, C. Chen and D. Muller)
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 224 - 225
Copyright
Copyright © Microscopy Society of America 2001

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References

Reference:

1.Xu, P., Loane, R.F. and Silcox, J., Ultramicros, 38, 127 (1991); Cowley, J.M., J. of Electr. Micros, 45, 3 (1996)CrossRefGoogle Scholar
2.Zuo, J. M., Kim, Miyoung and Holmestad, R., J. Electron Microscopy, 47, 121–127 (1998)CrossRefGoogle Scholar
3.Zandbergen, H.W. and Jansen, J., Journal of Microscopy, 190, 222 (1998)CrossRefGoogle Scholar
4.Zuo, J. M.and Weickenmeier, A. L, Ultramicros, 57, 375 (1995)CrossRefGoogle Scholar
5.Zuo, J. M.; Blaha, P.; Schwarz, K., Journal of Physics-condensed Matter, 9, 7541 (1997)CrossRefGoogle Scholar