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The Combination of STEM Tomography and STEM/EDS Analysis of NiSi Formation Related Defects in Semiconductor Wafer-foundries

Published online by Cambridge University Press:  25 July 2016

B. Fu ,
M. Gribelyuk ,
L. Dumas ,
C. Fang ,
N. LaManque ,
L. Hodgkins  and
E. Chen
B. Fu
Affiliation:
GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, NY, USA
M. Gribelyuk
Affiliation:
GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, NY, USA
L. Dumas
Affiliation:
GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, NY, USA
C. Fang
Affiliation:
GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, NY, USA
N. LaManque
Affiliation:
GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, NY, USA
L. Hodgkins
Affiliation:
GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, NY, USA
E. Chen
Affiliation:
GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, NY, USA

Abstract

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Abstract
Information
Microscopy and Microanalysis , Volume 22 , Supplement S3: Proceedings of Microscopy & Microanalysis 2016 , July 2016 , pp. 326 - 327
Copyright
© Microscopy Society of America 2016 

References

[1] Deng, F., et al, J. Appl. Phys. 81 (1997). p. 8047.CrossRefGoogle Scholar
[2] Zhao, W., et al, Microsc. Microanal. 20 (2014). p. 362.CrossRefGoogle Scholar