Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-25T16:14:10.579Z Has data issue: false hasContentIssue false
  • English
  • Français

Challenges and Opportunities in 3D Tri-gate Transistor Characterization

Published online by Cambridge University Press:  23 September 2015

Jiong Zhang ,
Ling Pan ,
Andrew A.Herzing ,
Ray Twesten ,
Paolo Longo ,
Noel Franco ,
Kevin Johnson  and
Zhiyong Ma
Jiong Zhang
Affiliation:
Intel Corporation, Corporate Quality Network, Hillsboro, OR 97124
Ling Pan
Affiliation:
Intel Corporation, Corporate Quality Network, Hillsboro, OR 97124
Andrew A.Herzing
Affiliation:
National Institute of Standards and Technology, Material Measurement Laboratory, Gaithersburg, MD 20899 USA
Ray Twesten
Affiliation:
Gatan Inc., Pleasanton, CA 94588
Paolo Longo
Affiliation:
Gatan Inc., Pleasanton, CA 94588
Noel Franco
Affiliation:
Intel Corporation, Corporate Quality Network, Hillsboro, OR 97124
Kevin Johnson
Affiliation:
Intel Corporation, Corporate Quality Network, Hillsboro, OR 97124
Zhiyong Ma
Affiliation:
Intel Corporation, Corporate Quality Network, Hillsboro, OR 97124

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 21 , Supplement S3: Proceedings of Microscopy & Microanalysis 2015 , August 2015 , pp. 2333 - 2334
Copyright
Copyright © Microscopy Society of America 2015 

References

References:

[1] Hisamoto, D, et al, IEDM (1989). p. 833.Google Scholar
[2] Auth, C, et al, VLSI. Technology (2012). p. 131.Google Scholar
[3] Thevenaz, P, et al, IEEE Transaction on Image Processing volume 7 (1998). p. 27.CrossRefGoogle Scholar
[4] Wolf, D, et al th.Google Scholar
[5] ORTEM lab engineers and artists are gratefully acknowledged for the TEM works to support the 22nm tri-gate technology.Google Scholar