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Atomic Structures of Oxygen-associated Defects in Sintered Aluminum Nitride Ceramics

Published online by Cambridge University Press:  08 August 2002

Yanfa Yan ,
S. J. Pennycook ,
M. Terauchi  and
M. Tanaka
Yanfa Yan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN
M. Terauchi
Affiliation:
Research Institute for Scientific Measurements, Tohoku University, Japan
M. Tanaka
Affiliation:
Research Institute for Scientific Measurements, Tohoku University, Japan
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Abstract

Convergent-beam electron diffraction and Z-contrast imaging are used to study oxygen-associated defects, flat inversion domain boundaries, dislocations, and interfaces in sintered AlN ceramics. The structures of these defects are directly derived from atomic-resolution Z-contrast images. The flat inversion domain boundaries contain a single Al-O octahedral layer and have a stacking sequence of . . .bAaB-bAc-CaAc. . , where -cAb- indicates the single octahedral layer. The expansion at the flat inversion domain boundaries is measured to be 0.06 (±0.02) nm. The interfaces between 2H- and polytypoid-AlN are found to be also inversion domain boundaries but their stacking sequence differs from that of the flat inversion domain boundaries.

Type
Articles
Information
Microscopy and Microanalysis , Volume 5 , Issue 5 , September 1999 , pp. 352 - 357
Copyright
© 1999 Microscopy Society of America

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