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Atomic Structure of Twinned As Precipitates in Lt-GaAs

Published online by Cambridge University Press:  02 July 2020

S. Ruvimov ,
Ch. Dicker ,
J. Washburn  and
Z. Liliental-Weber
S. Ruvimov
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA94720
Ch. Dicker
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA94720
J. Washburn
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA94720
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA94720
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Extract

Low-temperature GaAs (LT-GaAs) of a high resistivity and a short carrier lifetime (0.2-20 ps) is promising for device applications. High temperature annealing of LT-GaAs often leads to formation of twinned As precipitates in the GaAs matrix. Here high resolution electron microscopy has been applied to study the structure of As precipitates formed in MBE grown LT-GaAs layers during rapid thermal annealing at 850 and 950 °C. Twinning in the rhombohedral As was a special focus of this study.

Fig. 1 shows a HREM image of a typical As precipitate formed in a LT-GaAs layer after annealing at 850 °C. The precipitate has a rhombohedral structure with a=0.376 nm and c= 1.055 nm and a polyhedral shape with distinct facets. The long facets bounded by the {111}A planes of the GaAs are planar while the others have a high density of steps.

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 664 - 665
Copyright
Copyright © Microscopy Society of America

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