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Analysis of The Electronic Structure of Threading Dislocations in GaN Using Multiple Scattering Simulations

Published online by Cambridge University Press:  02 July 2020

I. Arslan  and
N. D. Browning
I. Arslan
Affiliation:
University of Illinois at Chicago, Department of Physics (M/C 273), 845 W. Taylor St, Chicago, IL60607-7059, USA.
N. D. Browning
Affiliation:
University of Illinois at Chicago, Department of Physics (M/C 273), 845 W. Taylor St, Chicago, IL60607-7059, USA.
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Abstract

The promise of advanced technological applications in optical and electronic devices has led to a significant recent research effort in the structure-property relationships of defects in GaN. in particular, the major scientific issues arise from the high density of threading dislocations induced during thin film growth by film-substrate lattice mismatch. There is still debate as to the exact effect of these dislocations on the overall properties; they may or may not be electrically active and are thought to decrease the lifetime of devices. As such, a fundamental understanding of the electronic properties of these defects will facilitate the development of new and improved devices.

The analysis of the electronic structure of dislocations in GaN is performed here by a combination of atomic resolution electron energy loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) and multiple scattering (MS) simulations. Experimentally, a Z-contrast image of the dislocation core is obtained first1 and used to position the probe for EELS.

Type
EELS Microanalysis at High Sensitivity: Advances in Spectrum Imaging, Energy Filtering and Detection (Organized by R. Leapman and J. Bruley)
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 1176 - 1177
Copyright
Copyright © Microscopy Society of America 2001

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References

References:

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