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Advances in Elemental Electron Tomography for the State-of-the-art Semiconductor Devices and Circuits Characterization and Failure Analysis

Published online by Cambridge University Press:  04 August 2017

B. Fu
Affiliation:
GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, NY, USA 12020
M Gribelyuk
Affiliation:
GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, NY, USA 12020
Frieder H. Baumann
Affiliation:
GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, NY, USA 12020
C. Fang
Affiliation:
GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, NY, USA 12020
Wayne Zhao
Affiliation:
GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, NY, USA 12020
E. Chen
Affiliation:
GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, NY, USA 12020
I. Brooks
Affiliation:
GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, NY, USA 12020
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Abstract

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© Microscopy Society of America 2017 

References

[1] Midgley, P. A. & Weyland, M. Ultramicroscopy 96 2003). p. 413.CrossRefGoogle Scholar
[2] Williams, David B. & Barry Carter, C. in Transmission Electron Microscopy, 2nd Edition Springer New York, NYp. 9.Google ScholarPubMed
[3] Zhang, J., etal, Microscopy and Microanalysis 21(S3 2015). p. 2333.CrossRefGoogle Scholar
[4] Baumann, F., et al, Microscopy and Microanalysis 22(S3 2016). p. 280.CrossRefGoogle Scholar
[5] Pantel, R. Ultramicroscopy 111 2011). p. 1607.CrossRefGoogle Scholar
[6] Fu, B., et al, Microscopy and Microanalysis 22(S3 2016). p. 326.CrossRefGoogle Scholar
[7] The authors acknowledge R. Newkirk, B. Popielarski, and N. LaManque for preparing the TEM samples.Google Scholar
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Advances in Elemental Electron Tomography for the State-of-the-art Semiconductor Devices and Circuits Characterization and Failure Analysis
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