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Interface Voids and Precipitates in GaAs Wafer Bonding

Published online by Cambridge University Press:  02 July 2020

R.R. Vanfleet ,
M. Shverdin ,
Z.H. Zhu ,
Y.H. Lo  and
J. Silcox
R.R. Vanfleet
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY14853
M. Shverdin
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY14853
Z.H. Zhu
Affiliation:
Department of Electrical Engineering, Cornell University, Ithaca, NY14853
Y.H. Lo
Affiliation:
Department of Electrical Engineering, Cornell University, Ithaca, NY14853
J. Silcox
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY14853
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Extract

Wafer bonding allows the production of Compliant Universal substrates that are made by bonding a thin (< 10 nm) layer twisted ∼45 degrees to the underlying substrate. Subsequent growth on this twisted layer results in defect free films even when the growth material has a significant lattice mismatch with the substrate. Defects on the bonding interface are a common observation when bonding GaAs to many substrates, but the exact nature of these defects has not been clear. We have studied this bonding layer in GaAs-GaAs twist bonded structures by Scanning Transmission Electron Microscopy and Electron Energy Loss Spectroscopy and established that the defects are voids with a portion being partially filled with gallium. Two general sizes of voids are seen. The larger voids are approximately 45 nm in diameter and 22 nm in the wafer normal direction and are distributed in an approximately linear relationship.

Type
Defects in Semiconductors
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 748 - 749
Copyright
Copyright © Microscopy Society of America

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References

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