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Identification of Star Defects in Gallium Nitride with HREBSD and ECCI

Published online by Cambridge University Press:  16 April 2021

Timothy J. Ruggles
Affiliation:
Sandia National Laboratories, Albuquerque, 87123, NM, USA
Julia I. Deitz
Affiliation:
Sandia National Laboratories, Albuquerque, 87123, NM, USA
Andrew A. Allerman
Affiliation:
Sandia National Laboratories, Albuquerque, 87123, NM, USA
C. Barry Carter
Affiliation:
Sandia National Laboratories, Albuquerque, 87123, NM, USA
Joseph R. Michael
Affiliation:
Sandia National Laboratories, Albuquerque, 87123, NM, USA
Corresponding
E-mail address:

Abstract

This paper characterizes novel “star” defects in GaN films grown with metal–organic vapor phase deposition (MOVPE) on GaN substrates with electron channeling contrast imaging (ECCI) and high-resolution electron backscatter diffraction (HREBSD). These defects are hundreds of microns in size and tend to aggregate threading dislocations at their centers. They are the intersection of six nearly ideal low-angle tilt boundaries composed of $\langle a\rangle$-type pyramidal edge dislocations, each on a unique slip system.

Type
Materials Science Applications
Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

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References

Adams, BL (1997). Orientation imaging microscopy: Emerging and future applications. Ultramicroscopy 67, 1117.CrossRefGoogle Scholar
Armstrong, A, Allerman, A, Fischer, A, King, M, Van Heukelom, M, Moseley, M, Kaplar, R, Wierer, J, Crawford, M & Dickerson, J (2016). High voltage and high current density vertical GaN power diodes. Electron Lett 52, 11701171.CrossRefGoogle Scholar
Ayers, JE, Kujofsa, T, Rago, P & Raphael, J (2016). Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization. Boca Raton, Florida: CRC Press.CrossRefGoogle Scholar
Bilby, B, Gardner, L & Smith, E (1958). The relation between dislocation density and stress. Acta Metall 6, 2933.CrossRefGoogle Scholar
Brigham Young University (2016). OpenXY. Available at https://github.com/BYU-MicrostructureOfMaterials/OpenXY.Google Scholar
Britton, T & Wilkinson, A (2012). High resolution electron backscatter diffraction measurements of elastic strain variations in the presence of larger rotations. Ultramicroscopy 114, 8295.CrossRefGoogle ScholarPubMed
Carnevale, SD, Deitz, JI, Carlin, JA, Picard, YN, De Graef, M, Ringel, SA & Grassman, TJ (2014). Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging. Appl Phys Lett 104, 232111.CrossRefGoogle Scholar
Deitz, JI, Carnevale, SD, De Graef, M, McComb, DW & Grassman, TJ (2016). Characterization of encapsulated quantum dots via electron channeling contrast imaging. Appl Phys Lett 109, 062101.CrossRefGoogle Scholar
Dunlap, BE, Ruggles, TJ, Fullwood, DT, Jackson, B & Crimp, MA (2018). Comparison of dislocation characterization by electron channeling contrast imaging and cross-correlation electron backscattered diffraction. Ultramicroscopy 184, 125133.CrossRefGoogle ScholarPubMed
Ernould, C, Beausir, B, Fundenberger, JJ, Taupin, V & Bouzy, E (2020). Global DIC approach guided by a cross-correlation based initial guess for HR-EBSD and on-axis HR-TKD. Acta Mater 191, 131148.CrossRefGoogle Scholar
Galiano, K, Deitz, J, Carnevale, S, Gleason, D, Paul, P, Zhang, Z, McSkimming, B, Speck, J, Ringel, S, Grassman, T, et al. (2018). Spatial correlation of the E$_C$-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride. J Appl Phys 123, 224504.CrossRefGoogle Scholar
Hatakeyama, Y, Nomoto, K, Kaneda, N, Kawano, T, Mishima, T & Nakamura, T (2011). Over 3.0 GW/cm$^{2}$ figure-of-merit GaN pn junction diodes on free-standing GaN substrates. IEEE Electron Device Lett 32, 16741676.CrossRefGoogle Scholar
Joy, D, Newbury, D & Davidson, D (1982). Electron channeling patterns in the scanning electron microscope. J Appl Phys 53, 81122.CrossRefGoogle Scholar
Kizilyalli, IC, Edwards, AP, Aktas, O, Prunty, T & Bour, D (2014). Vertical power pn diodes based on bulk GaN. IEEE Trans Electron Devices 62, 414422.CrossRefGoogle Scholar
Konijnenberg, P, Zaefferer, S & Raabe, D (2015). Assessment of geometrically necessary dislocation levels derived by 3D EBSD. Acta Mater 99, 402414.CrossRefGoogle Scholar
Kröner, E (1958). Continuum theory of dislocations and self-stresses. Ergebnisse der Angewandten Mathematik 5, 13271347.Google Scholar
Kysar, J, Saito, Y, Oztop, M, Lee, D & Huh, W (2010). Experimental lower bounds on geometrically necessary dislocation density. Int J Plast 26, 10971123.CrossRefGoogle Scholar
Leff, A, Weinberger, C & Taheri, M (2017). On the accessibility of the disclination tensor from spatially mapped orientation data. Acta Mater 138, 161173.CrossRefGoogle Scholar
Levinshtein, ME, Rumyantsev, SL & Shur, MS (2001). Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe. Hoboken, New Jersey: John Wiley & Sons.Google Scholar
Maurice, C, Driver, JH & Fortunier, R (2012). On solving the orientation gradient dependency of high angular resolution EBSD. Ultramicroscopy 113, 171181.CrossRefGoogle Scholar
Motoki, K (2010). Development of gallium nitride substrates. SEI Tech Rev 70, 2835.Google Scholar
Motoki, K, Okahisa, T, Matsumoto, N, Matsushima, M, Kimura, H, Kasai, H, Takemoto, K, Uematsu, K, Hirano, T, Nakayama, M, et al. (2001). Preparation of large freestanding GaN substrates by hydride vapor phase epitaxy using GaAs as a starting substrate. Jpn J Appl Phys 40, L140.CrossRefGoogle Scholar
Naresh-Kumar, G, Hourahine, B, Edwards, PR, Day, AP, Winkelmann, A, Wilkinson, AJ, Parbrook, PJ, England, G & Trager-Cowan, C (2012). Rapid nondestructive analysis of threading dislocations in wurtzite materials using the scanning electron microscope. Phys Rev Lett 108, 135503.CrossRefGoogle ScholarPubMed
Nye, J (1953). Some geometrical relations in dislocated crystals. Acta Metall 1, 153162.CrossRefGoogle Scholar
Pantleon, W (2008). Resolving the geometrically necessary dislocation content by conventional electron backscattering diffraction. Scr Mater 58, 994997.CrossRefGoogle Scholar
Picard, Y, Caldwell, J, Twigg, M, Eddy, C Jr, Mastro, M, Henry, R, Holm, R, Neudeck, P, Trunek, A & Powell, J (2007). Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging. Appl Phys Lett 91, 094106.CrossRefGoogle Scholar
Picard, YN, Kamaladasa, R, De Graef, M, Nuhfer, NT, Mershon, WJ, Owens, T, Sedlacek, L & Lopour, F (2012). Future prospects for defect and strain analysis in the SEM via electron channeling. Micros Today 20, 1216.CrossRefGoogle Scholar
Raghothamachar, B, Liu, Y, Peng, H, Ailihuamaer, T, Dudley, M, Shahedipour-Sandvik, FS, Jones, KA, Armstrong, A, Allerman, AA, Han, J, et al. (2020). X-ray topography characterization of gallium nitride substrates for power device development. J Cryst Growth 544, 125709.CrossRefGoogle Scholar
Ram, F, Li, Z, Zaefferer, S, Haghighat, SMH, Zhu, Z, Raabe, D & Reed, RC (2016). On the origin of creep dislocations in a Ni-base, single-crystal superalloy: An ECCI, EBSD, and dislocation dynamics-based study. Acta Mater 109, 151161.CrossRefGoogle Scholar
Ruggles, T, Bomarito, G, Qiu, R & Hochhalter, J (2018). New levels of high angular resolution EBSD performance via inverse compositional Gauss-Newton based digital image correlation. Ultramicroscopy 195, 8592.CrossRefGoogle ScholarPubMed
Ruggles, T, Fullwood, D & Kysar, J (2016 a). Resolving geometrically necessary dislocation density onto individual dislocation types using EBSD-based continuum dislocation microscopy. Int J Plast 76, 231243.CrossRefGoogle Scholar
Ruggles, T, Rampton, T, Khosravani, A & Fullwood, D (2016 b). The effect of length scale on the determination of geometrically necessary dislocations via EBSD continuum dislocation microscopy. Ultramicroscopy 164, 110.CrossRefGoogle ScholarPubMed
Ruggles, T, Yoo, Y, Dunlap, B, Crimp, M & Kacher, J (2020). Correlating results from high resolution EBSD with TEM- and ECCI-based dislocation microscopy: Approaching single dislocation sensitivity via noise reduction. Ultramicroscopy 210, 112927. https://doi.org/10.1016/j.ultramic.2019.112927CrossRefGoogle Scholar
Saitoh, Y, Sumiyoshi, K, Okada, M, Horii, T, Miyazaki, T, Shiomi, H, Ueno, M, Katayama, K, Kiyama, M & Nakamura, T (2010). Extremely low on-resistance and high breakdown voltage observed in vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates. Appl Phys Express 3, 081001.CrossRefGoogle Scholar
Shi, Q, Roux, S, Latourte, F & Hild, F (2019). Estimation of elastic strain by integrated image correlation on electron diffraction patterns. Ultramicroscopy 199, 1633.CrossRefGoogle ScholarPubMed
Sun, S, Adams, B & King, W (2000). Observations of lattice curvature near the interface of a deformed aluminium bicrystal. Philos Mag A 80, 925.CrossRefGoogle Scholar
Trager-Cowan, C, Sweeney, F, Trimby, PW, Day, AP, Gholinia, A, Schmidt, NH, Parbrook, PJ, Wilkinson, AJ & Watson, IM (2007). Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films. Phys Rev B 75, 085301.CrossRefGoogle Scholar
Vermeij, T & Hoefnagels, J (2018). A consistent full-field integrated DIC framework for HR-EBSD. Ultramicroscopy 191, 4450.CrossRefGoogle ScholarPubMed
Vilalta-Clemente, A, Naresh-Kumar, G, Nouf-Allehiani, M, Gamarra, P, di Forte-Poisson, M, Trager-Cowan, C & Wilkinson, A (2017). Cross-correlation based high resolution electron backscatter diffraction and electron channelling contrast imaging for strain mapping and dislocation distributions in InAlN thin films. Acta Mater 125, 125135.CrossRefGoogle Scholar
Wilkinson, AJ, Meaden, G & Dingley, DJ (2006). High resolution mapping of strains and rotations using electron back scatter diffraction. Mater Sci Technol 22, 111.CrossRefGoogle Scholar
Zaefferer, S & Elhami, NN (2014). Theory and application of electron channelling contrast imaging under controlled diffraction conditions. Acta Mater 75, 2050.CrossRefGoogle Scholar
Zanoni, E, Meneghini, M, Chini, A, Marcon, D & Meneghesso, G (2013). AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction. IEEE Trans Electron Devices 60, 31193131.CrossRefGoogle Scholar
Zhu, C, Kaufmann, K & Vecchio, KS (2020). Novel remapping approach for HR-EBSD based on demons registration. Ultramicroscopy 208, 112851.CrossRefGoogle ScholarPubMed
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Identification of Star Defects in Gallium Nitride with HREBSD and ECCI
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