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Identification of Star Defects in Gallium Nitride with HREBSD and ECCI

Published online by Cambridge University Press:  16 April 2021

Timothy J. Ruggles
Sandia National Laboratories, Albuquerque, 87123, NM, USA
Julia I. Deitz
Sandia National Laboratories, Albuquerque, 87123, NM, USA
Andrew A. Allerman
Sandia National Laboratories, Albuquerque, 87123, NM, USA
C. Barry Carter
Sandia National Laboratories, Albuquerque, 87123, NM, USA
Joseph R. Michael
Sandia National Laboratories, Albuquerque, 87123, NM, USA
E-mail address:


This paper characterizes novel “star” defects in GaN films grown with metal–organic vapor phase deposition (MOVPE) on GaN substrates with electron channeling contrast imaging (ECCI) and high-resolution electron backscatter diffraction (HREBSD). These defects are hundreds of microns in size and tend to aggregate threading dislocations at their centers. They are the intersection of six nearly ideal low-angle tilt boundaries composed of $\langle a\rangle$-type pyramidal edge dislocations, each on a unique slip system.

Materials Science Applications
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

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