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Identification of Metal-Impurity Gettering Sites in Silicon Formed by Supersaturation Boron Implantation and Annealing Using HRTEM and STEM Micro Analysis

Published online by Cambridge University Press:  02 July 2020

T. J. Headley
Affiliation:
Sandia National Laboratories, P. O. Box 5800,Albuquerque, NM, 87185
J. R. Michael
Affiliation:
Sandia National Laboratories, P. O. Box 5800,Albuquerque, NM, 87185
S. M. Myers
Affiliation:
Sandia National Laboratories, P. O. Box 5800,Albuquerque, NM, 87185
G. A. Petersen
Affiliation:
Sandia National Laboratories, P. O. Box 5800,Albuquerque, NM, 87185
T. L. Aselage
Affiliation:
Sandia National Laboratories, P. O. Box 5800,Albuquerque, NM, 87185
J. Bruley
Affiliation:
IBM Analytical Services, 1580 Rt. 2, Hopewell Junction, NY12533

Extract

Future Si microelectronic devices will require increasingly stringent limits on transition-metal impurities. There is thus a need to develop new methods for impurity gettering that rely on gettering sites that are active for arbitrarily small impurity concentrations, below the characteristic solid solubility at which metal suicides precipitate. These sites must also be highly preferred relative to solution sites in the Si matrix even at elevated temperatures. One such method has been developed that is also expected to be compatible with front (device) side gettering enabling smaller diffusion lengths for lower processing temperatures. This method involves boron implantion in the front side to levels above the boron-saturation limit and annealing to generate the gettering sites. The gettering layer is introduced at a depth beneath the device zone through appropriate choice of implantation energy. SIMS compositional profiling shows transition metals are strongly gettered within the boron-supersaturated layer. The purpose of this study was to identify the structure and composition of the gettering sites within the boron-supersaturated layer.

Type
Recent Developments In Microscopy For Studying Electronic and Magnetic Materials
Copyright
Copyright © Microscopy Society of America 1997

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References

Myers, S. M.et al., Nucl Instrum. Methods B, 1977, in press.Google Scholar
Armigliato, A.et al., Semiconductor Silicon, Electrochemical Society (1977) 638.Google Scholar
Frabboni, S.et al., Ultramicroscopy 35(1991)265.10.1016/0304-3991(91)90078-KCrossRefGoogle Scholar
This work was supported by the United States Department of Energy, Office of Basic Energy Sciences, under Contract DE-AC04-94AL85000. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy.Google Scholar
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Identification of Metal-Impurity Gettering Sites in Silicon Formed by Supersaturation Boron Implantation and Annealing Using HRTEM and STEM Micro Analysis
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Identification of Metal-Impurity Gettering Sites in Silicon Formed by Supersaturation Boron Implantation and Annealing Using HRTEM and STEM Micro Analysis
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Identification of Metal-Impurity Gettering Sites in Silicon Formed by Supersaturation Boron Implantation and Annealing Using HRTEM and STEM Micro Analysis
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