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Field-Dependent Measurement of GaAs Composition by Atom Probe Tomography

Published online by Cambridge University Press:  10 November 2017

Enrico Di Russo
UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, Normandie Université, 76000 Rouen, France
Ivan Blum
UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, Normandie Université, 76000 Rouen, France
Jonathan Houard
UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, Normandie Université, 76000 Rouen, France
Gérald Da Costa
UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, Normandie Université, 76000 Rouen, France
Didier Blavette
UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, Normandie Université, 76000 Rouen, France
Lorenzo Rigutti*
UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, Normandie Université, 76000 Rouen, France
*Corresponding author.
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The composition of GaAs measured by laser-assisted atom probe tomography may be inaccurate depending on the experimental conditions. In this work, we assess the role of the DC field and the impinging laser energy on such compositional bias. The DC field is found to have a major influence, while the laser energy has a weaker one within the range of parameters explored. The atomic fraction of Ga may vary from 0.55 at low-field conditions to 0.35 at high field. These results have been interpreted in terms of preferential evaporation of Ga at high field. The deficit of As is most likely explained by the formation of neutral As complexes either by direct ejection from the tip surface or upon the dissociation of large clusters. The study of multiple detection events supports this interpretation.

Materials Science Applications
© Microscopy Society of America 2017 

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