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Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination

Published online by Cambridge University Press:  27 November 2015

Zhaofeng Gan*
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287, USA
Michael DiNezza
Affiliation:
School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA
Yong-Hang Zhang
Affiliation:
School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA
David J. Smith
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287, USA
Martha R. McCartney
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287, USA
*
*Corresponding author. zgan2@asu.edu
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Abstract

The mean inner potential (MIP) and inelastic mean free path (IMFP) of undoped ZnTe are determined using a combination of off-axis electron holography and convergent beam electron diffraction. The ZnTe MIP is measured to be 13.7±0.6 V, agreeing with previously reported simulations, and the IMFP at 200 keV is determined to be 46±2 nm for a collection angle of 0.75 mrad. Dynamical effects affecting holographic phase imaging as a function of incident beam direction for several common semiconductors are systematically studied and compared using Bloch wave simulations. These simulation results emphasize the need for careful choice of specimen orientation when carrying out quantitative electron holography studies in order to avoid erroneous phase measurements.

Type
Materials Applications and Techniques
Copyright
© Microscopy Society of America 2015 

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