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Detection of Interstitial Molecules in Wide Band Gap Materials Using Cathodoluminescence Microanalysis

Published online by Cambridge University Press:  02 July 2020

M.A. Stevens Kalceff
M.A. Stevens Kalceff*
Affiliation:
Microstructural Analysis Unit, University of Technology, Sydney, PO 123, Broadway NSW, 2007, AUSTRALIAxlink:href="marion@phys.uts.edu.au">marion@phys.uts.edu.au
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Extract

Cathodoluminescence (CL) microanalysis (spectroscopy and microscopy) enables both pre-existing and irradiation induced defects in the bulk and surface defect structure of wide band gap materials (i.e. semiconductors and insulators) to be monitored and characterized with high spatial resolution and sensitivity. The local micro-volume of specimen may be selected for investigation by varying the electron beam parameters. CL micro analytical techniques allow the in situ monitoring of electron irradiation induced defects and the investigation of irradiation induced electromigration of mobile charged defect species. Irradiation can result in the formation of defects and /or the transformation of existing defect precursors. CL emissions from a material are usually associated with native and impurity defects of the host lattice, however in special cases CL microanalysis can provide direct or indirect evidence for the presence of interstitial molecular species in a material. Atomic displacements from the normal bonding (i.e. defect free) sites induced by an electron beam can result from either knock-on, or radiolytic processes, depending on the incident electron beam energy.

Type
Defects in Semiconductors
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 732 - 733
Copyright
Copyright © Microscopy Society of America

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