Transmission Electron Microscopy technique is a powerful tool to examine microstructures. However, the specimen preparation process usually requires tedious and careful cutting and lapping. In this paper, we present a TEM specimen preparation process which is simple, requires about one hour, and allows specific areas of patterned films deposited on silicon dioxide to be examined. The sample consisted of three thin film layers deposited on a Corning 1737 glass substrate. The top layer was 1000 A thick, low temperature oxide; the middle layer, 1000 A thick; amorphous silicon; the bottom layer, 1000 A thick, low temperature oxide. The top oxide layer was patterned to contain a square array of 10 × l0um openings, with a 100 um center to center spacing. A thin nickel layer was the evaporated, and the specimen was heated to form nickel silicide in the 10 × 10 um areas where Ni and Si were in contact.