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Generation and transportation of high-intensity pulsed ion beam at varying background pressures

Published online by Cambridge University Press:  13 September 2017

X.P. Zhu
Affiliation:
Surface Engineering Laboratory, School of Materials Science and Engineering and Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, China
L. Ding
Affiliation:
Surface Engineering Laboratory, School of Materials Science and Engineering and Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, China
Q. Zhang
Affiliation:
Surface Engineering Laboratory, School of Materials Science and Engineering and Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, China
Yu. Isakova
Affiliation:
Laboratory of Beam and Plasma Technology, High Technologies Physics Institute, Tomsk Polytechnic University, 30, Lenin Avenue, 634050 Tomsk, Russia
Y. Bondarenko
Affiliation:
Laboratory of Beam and Plasma Technology, High Technologies Physics Institute, Tomsk Polytechnic University, 30, Lenin Avenue, 634050 Tomsk, Russia
A.I. Pushkarev
Affiliation:
Surface Engineering Laboratory, School of Materials Science and Engineering and Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, China Laboratory of Beam and Plasma Technology, High Technologies Physics Institute, Tomsk Polytechnic University, 30, Lenin Avenue, 634050 Tomsk, Russia
M.K. Lei*
Affiliation:
Surface Engineering Laboratory, School of Materials Science and Engineering and Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, China
*
*Address correspondence and reprint requests to: M.K. Lei, Surface Engineering Laboratory, School of Materials Science and Engineering and Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, China. E-mail: surfeng@dlut.edu.cn

Abstract

High-intensity pulsed ion beam (HIPIB) technology is developed as an advanced manufacturing method for components with improved wear, corrosion and/or fatigue performance, etc. Robust HIPIB equipment with stable repetitive operation, long-lifetime, and easy maintenance are desired for industrial applications, on which stability of ion beam parameters is critical to achieve consistent result of reproducibility. Here, magnetically insulated ion diodes (MIDs) as ion source with durable graphite anode are investigated in a simple self-magnetic field configuration under repetitive operation. Influence of background pressure on ion beam generation and transportation is emphasized since ion beam sources were intrinsically a vacuum-based system. Comparative experiments were conducted on two types of HIPIB equipment, that is, TEMP-6 and TEMP-4M, differing in vacuum packages where turbo-molecular pump or oil diffusion pump was used. Both the HIPIB equipments are operated on a bipolar pulse mode, that is, a first negative pulse of 150–200 kV with pulse duration 450–500 ns to generate anode plasma on explosive electron emission, and a second positive pulse of 200–250 kV with 120 ns to accelerate the ions. Ion beam energy density up to 8 J/cm2 is achievable using MIDs of geometrical focusing configuration, and the total energy, energy density distribution along cross-section, deflection and divergence, and charge neutralization of the ion beams are assessed under background pressures in a wide range of two orders of magnitude, that is, 1–100 mPa. No appreciable change in the parameters is observed up to 50 mPa, and merely a slight increase in the beam deflection from about ±3 mm to about ±4 mm at the focal point over 50 mPa. The stability of ion beam at the varied pressure is mainly facilitated by the higher pressure up to several Pa in anode–cathode gap during plasma generation and good neutralizing effect for ion beam transportation.

Type
Research Article
Copyright
Copyright © Cambridge University Press 2017 

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References

REFERENCES

Bystritski, V.M. & Didenko, A.N. (1989). High-Power Ion Beams. New York: American Institute of Physics.Google Scholar
Chernov, I.P., Berezneeva, E.V., Beloglazova, P.A., Ivanova, S.V., Kireeva, I.V., Lider, A.M., Remnev, G.E., Pushilina, N.S. & Cherdantsev, Yu.P. (2014). Physicomechanical properties of the surface of a zirconium alloy modified by a pulsed ion beam. Tech. Phys. 59, 535539.CrossRefGoogle Scholar
Davis, H.A., Bartsch, R.R., Olson, J.C., Rej, D.J. & Waganaar, W.J. (1997). Intense ion beam optimization and characterization with infrared imaging. J. Appl. Phys. 82, 32233231.CrossRefGoogle Scholar
Davis, H.A., Remnev, G.E., Stinnett, R.W. & Yatsui, K. (1996). Intense ion-beam treatment of materials. MRS Bull. 21, 5862.CrossRefGoogle Scholar
Langmuir, I. (1913). The effect of space charge and residual gases on thermionic currents in high vacuum. Phys. Rev. 2, 4551.CrossRefGoogle Scholar
Lei, M.K., Zhu, X.P. & Guo, D.M. (2016). Reducing geometrical, physical and chemical constraints in surface integrity of high performance stainless steel components by surface modification. J. Manuf. Sci. Eng. –Trans. ASME 138, 044501.CrossRefGoogle Scholar
Lei, M.K., Zhu, X.P., Liu, C., Xin, J.P., Han, X.G., Li, P., Dong, Z.H., Wang, X. & Miao, S.M. (2009). A novel shock processing by high-intensity pulsed ion beam. J. Manuf. Sci. Eng. – Trans. ASME 131, 031013.CrossRefGoogle Scholar
Lei, M.K., Zhu, X.P. & Wang, X.J. (2002). The oxidation resistance of ion-implanted γ-TiAl base intermetallics. Oxid. Met. 58, 361374.CrossRefGoogle Scholar
Olson, C.L. (1982). Ion beam propagation and focusing. J. Fusion Energy 1, 309339.CrossRefGoogle Scholar
Pointon, T.D. (1989). Charge exchange effects in ion diodes. J. Appl. Phys. 66, 28792887.CrossRefGoogle Scholar
Pushkarev, A.I., Isakova, Yu.I. & Khailov, I.P. (2013). The influence of a shield on intense ion beam transportation. Laser Part. Beams 31, 493501.CrossRefGoogle Scholar
Pushkarev, A.I., Isakova, Yu.I. & Khailov, I.P. (2014). Correlation analysis of intense ion beam energy in a self magnetically insulated diode. Laser Part. Beams 32, 311319.CrossRefGoogle Scholar
Pushkarev, A.I., Isakova, Yu.I. & Khailov, I.P. (2015). Intense ion beam generation in a diode with explosive emission cathode in self-magnetically insulated mode. Euro. Phys. J. D: Plasma Phys. 69, 40. https://doi.org/10.1140/epjd/e2014-50319-8.CrossRefGoogle Scholar
Pushkarev, A.I. & Pak, V.G. (2015). Analysis of drifting electron concentration in a self-magnetically insulated ion diode. Tech. Phys. Lett. 41, 146148.CrossRefGoogle Scholar
Remnev, G.E., Uglov, V.V., Shymanski, V.I., Pavlov, S.K. & Kuleshov, A.K. (2014). Formation of nanoscale carbon structures in the surface layer of metals under the impact of high intensity ion beam. Appl. Surf. Sci. 310, 204209.CrossRefGoogle Scholar
Renk, T.J., Provencio, P.P., Prasad, S.V., Shlapakovski, A.S., Petrov, A.V., Yatsui, K., Jiang, W. & Suematsu, H. (2004). Material modifications using intense ion beams. Proc. IEEE 92, 10571081.CrossRefGoogle Scholar
Renk, T.J., Sridharan, K., Harrington, S.P., Johnson, A.K. & Lahoda, E. (2010). Incorporation of gadolinium and boron into Zirconium alloy: Surface alloying of immiscible materials using an intense pulsed ion beam. Nucl. Instrum. Methods Phys. Res. B 268, 26662678.CrossRefGoogle Scholar
Rej, D.J., Bartsch, R.R., Davis, H.A., Faehl, R.J., Greenly, J.B. & Waganaar, W.J. (1993). Microsecond pulse width, intense, light-ion beam accelerator. Rev. Sci. Instrum. 64, 27532760.CrossRefGoogle Scholar
Rej, D.J., Davis, H.A., Olson, J.C., Remnev, G.E., Zakoutaev, A.N., Ryzhkov, V.A., Struts, V.K., Isakov, I.F., Shulov, V.A., Nochevnaya, N.A., Stinnett, R.W., Neau, E.L., Yatsui, K. & Jiang, W. (1997). Materials processing with intense pulsed ion beams. J. Vac. Sci. Technol. A 15, 10891097.CrossRefGoogle Scholar
Rose, D.V., Ottinger, P.F., Welch, D.R., Oliver, B.V. & Olson, C.L. (1999). Numerical simulations of self-pinched transport of intense ion beams in low-pressure gases. Phys. Plasmas 6, 40944103.CrossRefGoogle Scholar
Stepanov, A.V., Lopatin, V.S., Remnev, G.E. & Melnikova, E.N. (2008). Repetitive rate operation mode of magnetically isolated diode with dielectric anode. 15th Int. Symp. on HighCurrent Electronics: Proc. Tomsk: Publish House of the IAO SB RAS, 100–102.Google Scholar
Suematsu, H., Kitajima, K., Suzuki, T., Jiang, W., Yatsui, K., Kurashima, K. & Bando, Y. (2002). Preparation of polycrystalline boron carbide thin films at room temperature by pulsed ion-beam evaporation. Appl. Phys. Lett. 80, 11531155.CrossRefGoogle Scholar
Werner, Z., Piekoszewski, J. & Szymczyk, W. (2001). Generation of high-intensity pulsed ion and plasma beams for material processing. Vacuum 63, 701708.CrossRefGoogle Scholar
Zhu, X.P., Lei, M.K. & Ma, T.C. (2002). Characterization of a high-intensity bipolar-mode pulsed ion source for surface modification of materials. Rev. Sci. Instrum. 73, 17281733.CrossRefGoogle Scholar
Zhu, X.P., Suematsu, H., Jiang, W. & Yatsui, K. (2008). Structures and photoluminescence properties of silicon thin films prepared by pulsed ion-beam evaporation. Mater. Sci. Eng. B 149, 105110.CrossRefGoogle Scholar
Zhu, X.P., Zhang, F.G., Song, T.K. & Lei, M.K. (2014). Nonlinear wear response of WC-Ni cemented carbides irradiated by high-intensity pulsed ion beam. J. Tribol. –Trans. ASME 136, 011603.CrossRefGoogle Scholar
Zhu, X.P., Zhang, F.G., Tang, Y. & Lei, M.K. (2011). Phase transformation under beam-target interactions during high-intensity pulsed ion beam irradiation at low pressure. Laser Part. Beams 29, 283289.CrossRefGoogle Scholar