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Generation and evolution of plasma during femtosecond laser ablation of silicon in different ambient gases

Published online by Cambridge University Press:  06 August 2013

Zhandong Chen
Affiliation:
The MOE Key Laboratory of Weak Light Nonlinear Photonics, TEDA Applied Physics School and School of Physics, Nankai University, Tianjin, China
Qiang Wu*
Affiliation:
The MOE Key Laboratory of Weak Light Nonlinear Photonics, TEDA Applied Physics School and School of Physics, Nankai University, Tianjin, China
Ming Yang
Affiliation:
The MOE Key Laboratory of Weak Light Nonlinear Photonics, TEDA Applied Physics School and School of Physics, Nankai University, Tianjin, China
Baiquan Tang
Affiliation:
The MOE Key Laboratory of Weak Light Nonlinear Photonics, TEDA Applied Physics School and School of Physics, Nankai University, Tianjin, China
Jianghong Yao
Affiliation:
The MOE Key Laboratory of Weak Light Nonlinear Photonics, TEDA Applied Physics School and School of Physics, Nankai University, Tianjin, China
Romano A. Rupp
Affiliation:
The MOE Key Laboratory of Weak Light Nonlinear Photonics, TEDA Applied Physics School and School of Physics, Nankai University, Tianjin, China Faculty of Physics, Vienna University, Wien, European Union
Yaan Cao
Affiliation:
The MOE Key Laboratory of Weak Light Nonlinear Photonics, TEDA Applied Physics School and School of Physics, Nankai University, Tianjin, China
Jingjun Xu
Affiliation:
The MOE Key Laboratory of Weak Light Nonlinear Photonics, TEDA Applied Physics School and School of Physics, Nankai University, Tianjin, China
*
Address correspondence and reprint requests to: Qiang Wu, The MOE Key Laboratory of Weak Light Nonlinear Photonics, TEDA Applied Physics School and School of Physics, Nankai University, Tianjin 300457, China. E-mail: wuqiang@nankai.edu.cn

Abstract

Generation and evolution of plasma during femtosecond laser ablation of silicon are studied by steady-state and time-resolved spectroscopy in air, N2, SF6, and under vacuum. The plasma is generated faster than 200 ps (time resolution of our experiment) after excitation and mainly contains atoms and monovalent ions of silicon. Time-resolved spectra prove that silicon ions are faster than the silicon atoms which may be attributed to Coulomb repulsion and a local electric field when they are ejected from the silicon surface. During plasma evolution, ambient gas causes a confinement effect that enhances the dissociation of ambient gas molecules and the re-deposition of the removed material and leads to higher intensity and longer lifetime of the emission spectra. In SF6, a chemical reaction increases the plasma density and weakens the re-deposition effect. The different processes during plasma evolution strongly influence microstructure formation.

Type
Research Article
Copyright
Copyright © Cambridge University Press 2013 

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