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Current status of plasma emission electronics: II. Hardware

Published online by Cambridge University Press:  21 August 2003

A.S. BUGAEV
Affiliation:
Institute of High Current Electronics, Siberian Division of the Russian Academy of Science, Tomsk, Russia
A.V. VIZIR
Affiliation:
Institute of High Current Electronics, Siberian Division of the Russian Academy of Science, Tomsk, Russia
V.I. GUSHENETS
Affiliation:
Institute of High Current Electronics, Siberian Division of the Russian Academy of Science, Tomsk, Russia
A.G. NIKOLAEV
Affiliation:
Institute of High Current Electronics, Siberian Division of the Russian Academy of Science, Tomsk, Russia
E.M. OKS
Affiliation:
Institute of High Current Electronics, Siberian Division of the Russian Academy of Science, Tomsk, Russia
G.Yu. YUSHKOV
Affiliation:
Institute of High Current Electronics, Siberian Division of the Russian Academy of Science, Tomsk, Russia
Yu.A. BURACHEVSKY
Affiliation:
State University of Control Systems and Radioelectronics, Tomsk, Russia
V.A. BURDOVITSIN
Affiliation:
State University of Control Systems and Radioelectronics, Tomsk, Russia
I.V. OSIPOV
Affiliation:
State University of Control Systems and Radioelectronics, Tomsk, Russia
N.G. REMPE
Affiliation:
State University of Control Systems and Radioelectronics, Tomsk, Russia

Abstract

This paper is devoted to the engineering embodiment of the modern methods for producing charged ion and electron beams by extracting them from the plasma of a discharge. Electron beams use to execute electron-beam welding, annealing, and surface heating of materials and to realize plasmochemical reactions stimulated by fast electrons. Ion beams allow realization of technologies of ion implantation or ion-assisted deposition of coatings thereby opening new prospects for the creation of compounds and alloys by the method that makes it possible to obtain desired parameters and functional properties of the surface. A detailed description is given to the performance and design of devices producing beams of this type: the ion and electron sources being developed at the laboratory of plasma sources of the Institute of High-Current Electronics of the Russian Academy of Sciences and the laboratory of plasma electronics of Tomsk State University of Control Systems and Radioelectronics.

Type
Research Article
Copyright
© 2003 Cambridge University Press

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