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YBa2Cu3O7−δ on MgO films grown by pulsed organometallic beam epitaxy and a grain boundary junction application

Published online by Cambridge University Press:  03 March 2011

K.A. Dean ,
D.B. Buchholz ,
L.D. Marks ,
R.P.H. Chang ,
B.V. Vuchic ,
K.L. Merkle ,
D.B. Studebaker  and
T.J. Marks
K.A. Dean
Affiliation:
Department of Materials Science and Engineering, and NSF Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208-3108
D.B. Buchholz
Affiliation:
Department of Materials Science and Engineering, and NSF Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208-3108
L.D. Marks
Affiliation:
Department of Materials Science and Engineering, and NSF Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208-3108
R.P.H. Chang
Affiliation:
Department of Materials Science and Engineering, and NSF Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208-3108
B.V. Vuchic
Affiliation:
Materials Science Division, and NSF Science and Technology Center for Superconductivity, Argonne National Laboratory, Argonne, Illinois 60439
K.L. Merkle
Affiliation:
Materials Science Division, and NSF Science and Technology Center for Superconductivity, Argonne National Laboratory, Argonne, Illinois 60439
D.B. Studebaker
Affiliation:
Department of Chemistry, and NSF Science, and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208-3108
T.J. Marks
Affiliation:
Department of Chemistry, and NSF Science, and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208-3108
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Abstract

MgO films and YBa2Cu3O7−δ/MgO multilayer films were developed with the pulsed organometallic beam epitaxy (POMBE) growth technique, and grain boundary junctions were fabricated from the films to demonstrate the utility of the multilayers. High-quality MgO films were grown on LaAlO3 substrates by POMBE using a Mg(dpm)2 precursor. MgO crystallinity, as assessed by x-ray diffraction rocking curves, improved with the use of CuOx or YBa2Cu3O7−δ buffer layers. YBa2Cu3O7−δ films grown on the MgO layer by POMBE exhibited a Tc0 of 83 K and a Jc (12 K) exceeding 106 A/cm2 for applied magnetic fields up to 3 × 104 G. Grain boundary junctions were formed by growing YBa2Cu3O7−δ on MgO films that had been pretreated with a simple sputtering technique. This sputtering induces a controlled, 45°grain boundary in subsequently deposited YBa2Cu3O7−δ films. The resulting boundary showed weak-link current-voltage behavior and an IcRn product of 52 μV at 10 K, demonstrating that sputter-induced grain boundary junctions are compatible with multilayer technology.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 11 , November 1995 , pp. 2700 - 2707
Copyright
Copyright © Materials Research Society 1995

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References

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