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A study on materials interactions between Mo electrode and InGaZnO active layer in InGaZnO-based thin film transistors

Published online by Cambridge University Press:  31 January 2011

Kyung Park ,
Chee-Hong An ,
Byung-Il Hwang ,
Hoo-Jeong Lee ,
Hyoungsub Kim ,
Kyungseok Son ,
Jang-Yeon Kwon  and
Sangyun Lee
Hyoungsub Kim*
Affiliation:
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
Sangyun Lee
Affiliation:
Display Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600, Korea
*
a)Address all correspondence to this author. e-mail: hsubkim@skku.edu
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Abstract

This study examined the degradation of the device performance of InGaZnO4 (IGZO)-based thin-film transistors after annealing at high temperatures in air ambient. Using various characterization methods including scanning electron microscopy, x-ray diffraction, and transmission electron microscopy, we were able to disclose the details of a two-stage phase transformation that led to the device performance degradation. The Mo electrodes first succumbed to oxidation at moderate temperatures (400∼500 °C) and then the Mo oxide further reacted with IGZO to produce an In–Mo–O compound with some Ga at higher temperatures (600∼700 °C). We analyzed our results based on the thermodynamics and kinetics data available in the literature and confirmed that our findings are in agreement with the experimental results.

Keywords

OxideSemiconductingThin film
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 2 , February 2010 , pp. 266 - 271
Copyright
Copyright © Materials Research Society 2010

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References

REFERENCES

1.Sun, Y., Rogers, J.A.Inorganic semiconductors for flexible electronics. Adv. Mater. 19, 1897 (2007)CrossRefGoogle Scholar
2.Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., Hosono, H.Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432, 488 (2004)CrossRefGoogle ScholarPubMed
3.Lim, W., Douglas, E.A., Kim, S-H., Norton, D.P., Pearton, S.J., Ren, F., Shen, H., Chang, W.H.Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape. Appl. Phys. Lett. 93, 252103 (2008)CrossRefGoogle Scholar
4.Lim, W., Douglas, E.A., Kim, S-H., Norton, D.P., Pearton, S.J., Ren, F., Shen, H., Chang, W.H.High mobility InGaZnO4 thin-film transistors on paper. Appl. Phys. Lett. 94, 072103 (2009)CrossRefGoogle Scholar
5.Kim, M., Jeong, J.H., Lee, H.J., Ahn, T.K., Shin, H.S., Park, J-S., Jeong, J.K., Mo, Y-G., Kim, H.D.High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper. Appl. Phys. Lett. 90, 212114 (2007)CrossRefGoogle Scholar
6.Hosono, H., Nomura, K., Ogo, Y., Uruga, T., Kamiya, T.Factors controlling electron transport properties in transparent amorphous oxide semiconductors. J. Non-Cryst. Solids 354, 2796 (2008)CrossRefGoogle Scholar
7.Chiang, H.Q., McFarlane, B.R., Hong, D., Preseley, R.E., Wagner, J.F.Processing effects on the stability of amorphous indium gallium zinc oxide thin film transistors. J. Non-Cryst. Solids 354, 2826 (2008)CrossRefGoogle Scholar
8.Hosono, H.Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application. J. Non-Cryst. Solids 352, 851 (2006)CrossRefGoogle Scholar
9.Gale, W.F., Totemier, T.C.Smithells Metals Reference Book 8th ed. (Elsevier, Oxford, UK 2004)Google Scholar
10.Massalaski, T.B.Binary Alloy Phase Diagrams 1st ed. (American Society for Metals, Metals Park, OH 1986)Google Scholar
11.Park, J-S., Jeong, J.K., Mo, Y-G., Kim, H.D., Kim, C-J.Control of threshold voltage in ZnO-based oxide thin film transistors. Appl. Phys. Lett. 93, 033513 (2008)Google Scholar
12.Barin, I., Knacke, O.Thermochemical Properties of Inorganic Substances (Springer-Verlag, Berlin 1973)Google Scholar
13.Bergner, D.Diffusion in Metals and Alloys edited by F.J. Kedves and D.L. Beke (Trans Tech Publications, Aedermannsdorf, Switzerland 1983)Google Scholar
14.Azad, A-M.Fine-tuning of ceramic-based chemical sensors via novel microstructural modification. Sens. Actuators, B 120, 25 (2006)Google Scholar
15.Fais, E., Borrmann, H., Mattausch, Hj., Simon, A.Crystal structures of two forms of In5Mo18O28 and twinning. Z. Anorg. Allg. Chem. 621, 1178 (1995)CrossRefGoogle Scholar
16.Nomura, K., Takagi, A., Kamiya, T., Ohta, H., Hirano, M., Hosono, H.Amorphous oxide semiconductors for high-performance flexible thin-film transistors. Jpn. J. Appl. Phys. 45, 4303 (2006)CrossRefGoogle Scholar