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A study on materials interactions between Mo electrode and InGaZnO active layer in InGaZnO-based thin film transistors

Published online by Cambridge University Press:  31 January 2011

Kyung Park ,
Chee-Hong An ,
Byung-Il Hwang ,
Hoo-Jeong Lee ,
Hyoungsub Kim ,
Kyungseok Son ,
Jang-Yeon Kwon  and
Sangyun Lee
Hyoungsub Kim*
Affiliation:
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea
Sangyun Lee
Affiliation:
Display Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600, Korea
*
a)Address all correspondence to this author. e-mail: hsubkim@skku.edu
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Abstract

This study examined the degradation of the device performance of InGaZnO4 (IGZO)-based thin-film transistors after annealing at high temperatures in air ambient. Using various characterization methods including scanning electron microscopy, x-ray diffraction, and transmission electron microscopy, we were able to disclose the details of a two-stage phase transformation that led to the device performance degradation. The Mo electrodes first succumbed to oxidation at moderate temperatures (400∼500 °C) and then the Mo oxide further reacted with IGZO to produce an In–Mo–O compound with some Ga at higher temperatures (600∼700 °C). We analyzed our results based on the thermodynamics and kinetics data available in the literature and confirmed that our findings are in agreement with the experimental results.

Keywords

OxideSemiconductingThin film
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 2 , February 2010 , pp. 266 - 271
Copyright
Copyright © Materials Research Society 2010

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References

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