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Structural studies of HgCdTe grown by MOCVD on lattice-matched substrates

Published online by Cambridge University Press:  31 January 2011

M. J. Bevan ,
J. Greggi  and
N. J. Doyle
M. J. Bevan
Affiliation:
Westinghouse Science & Technology Center, Pittsburgh, Pennsylvania 15235
J. Greggi
Affiliation:
Westinghouse Science & Technology Center, Pittsburgh, Pennsylvania 15235
N. J. Doyle
Affiliation:
Westinghouse Science & Technology Center, Pittsburgh, Pennsylvania 15235
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Abstract

Improved structural quality Hg1−xCdxTe epitaxial films have been grown by metal organic chemical vapor deposition (MOCVD) using the interdiffused multilayer process (IMP) on lattice-matched CdZnTe substrates at temperatures above 400°C with diethyltelluride. Double-crystal rocking curve data with values as low as 25 arcsec correlated with cross-sectional transmission electron micrographs. The process of growing alternate layers of HgTe/CdTe for improved compositional uniformity, and the inherent mismatch, was not detrimental to the structural quality, which was limited by that of the substrate.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 7 , July 1990 , pp. 1475 - 1479
Copyright
Copyright © Materials Research Society 1990

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