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Solid solutions of AlN and SiC grown by plasma-assisted, gas-source molecular beam epitaxy

Published online by Cambridge University Press:  31 January 2011

R.S. Kern ,
L.B. Rowland ,
S. Tanaka  and
R.F. Davis
R.S. Kern
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907
L.B. Rowland
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907
S. Tanaka
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907
R.F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Box 7907, Raleigh, North Carolina 27695-7907
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Abstract

Solid solutions of aluminum nitride (AlN) and silicon carbide (SiC), the only intermediate phases in their respective binary systems, have been grown at 1050 °C on α(6H)-SiC(0001) substrates cut 3–4° off-axis toward [11$\overline 1$0] using plasma-assisted, gas-source molecular beam epitaxy. A film having the approximate composition of (AlN)0.3(SiC)0.7, as determined by Auger spectrometry, was selected for additional study and is the focus of this note. High resolution transmission electron microscopy (HRTEM) revealed that the film was monocrystalline with the wurtzite (2H) crystal structure.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 8 , Issue 7 , July 1993 , pp. 1477 - 1480
Copyright
Copyright © Materials Research Society 1993

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References

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