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Preparation and characteristics of 90° rotated biepitaxial Fe3O4 thin films

Published online by Cambridge University Press:  31 January 2011

Hiroshi Matsuda
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916–5 Takayama-cho, Ikoma, Nara 630–0101, Japan
Hiroshi Sakakima
Affiliation:
Graduate School of Materials Science, Nara Institute of Science and Technology, 8916–5 Takayama-cho, Ikoma, Nara 630–0101, Japan
Hideaki Adachi
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika, Kyoto 619–0237, Japan
Akihiro Odagawa
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika, Kyoto 619–0237, Japan
Kentaro Setsune
Affiliation:
Advanced Technology Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3–4 Hikaridai, Seika, Kyoto 619–0237, Japan
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Abstract

In-plane 90° rotated biepitaxial Fe3O4 thin films have been successfully prepared onto MgO (110) substrates using a CeO2 seed layer and their microstructure, electric, and magnetic properties were investigated. From the x-ray φ-scan measurements, the in-plane epitaxial relations were determined as 〈110〉Fe3O4//〈110〉MgO and 〈001〉Fe3O4//〈001〉MgO for the no-seeded Fe3O4 layer, and 〈001〉Fe3O4//〈110〉MgO and 〈110〉Fe3O4//〈001〉MgO for the CeO2 (110) seeded Fe3O4 layer. The CeO2 seed layer was found to rotate the upper Fe3O4 lattice at 90° upon normal axis to the layer against the no-seeded Fe3O4. The transmission electron microscopy and electron diffraction analyses revealed that the transition region of the biepitaxial Fe3O4 boundary between CeO2-seeded and no-seeded portions consisted of columnarlike polycrystalline grains. The Fe 3O4 films exhibited single-crystallinelike electric and magnetic properties, however, substantial spin-dependent-tunneling magnetoresistance across the 90° grain boundary was not observed even in the antiparallel situation for each Fe3O4 portion.

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Articles
Copyright
Copyright © Materials Research Society 2002

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References

1.Gupta, A. and Sun, J.Z., J. Magn. Magn. Mater. 200, 24 (1999).Google Scholar
2.Soulen, R.J. Jr., Byers, J.M., Osofsky, M.S., Nadgorny, B., Ambrose, T., Cheng, S.F., Broussard, P.R., Tanaka, C.T., Nowak, J., Moodera, J.S., Berry, A., and Coey, J.M.D., Science. 282, 85 (1998).CrossRefGoogle Scholar
3.Teresa, J.M. De, Barthélémy, A., Fert, A., Contour, J.P., Montaigne, F., and Seneor, P., Science. 286, 507 (1999).CrossRefGoogle Scholar
4.Lu, Y., Li, X.W., Gong, G.Q., and Xiao, G., Phys. Rev. B 54, 8357 (1996).Google Scholar
5.Mathur, N.D., Burnell, G., Isaac, S.P., Jackson, T.J., Teo, B-S., MacManus-Driscoll, J.L., Cohen, L.F., Evetts, J.E., and Blamire, M.G., Nature 387, 266 (1997).Google Scholar
6.Kwon, C., Jia, Q.X., Fan, Y., Hundley, M.F., Reagor, D.W., Coulter, J.Y., and Peterson, D.E., Appl. Phys. Lett. 72, 486 (1998).CrossRefGoogle Scholar
7.Mathieu, R. and Svedlindh, P., Phys. Rev. B 62, 3333 (2000).Google Scholar
8.Seneor, P., Fert, A., Maurice, J-L., Montaigne, F., Petroff, F., and Vaurés, A., Appl. Phys. Lett. 74, 4017 (1999).Google Scholar
9.Li, X.W., Gupta, A., Xiao, G., Qian, W., and Dravid, V.P., Appl. Phys. Lett. 73, 3282 (1998).CrossRefGoogle Scholar
10.Ghosh, K., Ogale, S.B., Pai, S.P., Robson, M., Li, E., Jin, I., Dong, Z., Greene, R.L., Ramesh, R., and Venkatesan, T.Appl. Phys. Lett. 73 689 (1998).Google Scholar
11.Rosner, S.J., Char, K., and Zaharchuk, G., Appl. Phys. Lett. 60, 1010 (1992).Google Scholar
12.Margulies, D.T., Parker, F.T., Spada, F.E., Goldman, R.S., Li, J., Sinclair, R., and Berkowitz, A.E., Phys. Rev. B 53, 9175 (1996).CrossRefGoogle Scholar
13.Coey, J.M.D., Berkowitz, A.E., Balcells, L.I., Putris, F.F., and Parker, F.T., Appl. Phys. Lett. 73, 734 (1998).Google Scholar
14.Li, X.W., Gupta, A., Xiao, G., and Gong, G.Q., J. Appl. Phys. 83, 7049 (1998).CrossRefGoogle Scholar
15.Kittel, C.,Introduction to Solid State Physics, 7th ed. (John Wiley and Sons, New York, 1996).Google Scholar
16.Hibma, T., Voogt, F.C., and Niesen, L., J. Appl. Phys. 85, 5291 (1999).CrossRefGoogle Scholar
17.Matsuda, H., Takeuchi, M., Adachi, H., Hiramoto, M., Matsukawa, N., Odagawa, A., Setsune, K., and Sakakima, H., Jpn. J. Appl. Phys. 41 L387 (2002).CrossRefGoogle Scholar