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Orientation of rf-sputter-deposited MoS2 films

Published online by Cambridge University Press:  31 January 2011

P. A. Bertrand
P. A. Bertrand
Affiliation:
Chemistry and Physics Laboratory, The Aerospace Corporation, P.O. Box 92957, Los Angeles, California 90009-2960
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Abstract

A theory to predict the orientation of radio-frequency (rf) sputter-deposited MoS2 films with respect to the substrate surface is presented. Oxygen-containing species such as H2O and -OH are postulated to be active sites that force crystallites to form with their basal planes perpendicular to the surface. X-ray diffraction is used to determine the crystallite orientation in films deposited on smooth, rough, or oxidized Si surfaces, as well as on fused silica or gold surfaces. The results support the theory. To produce MoS2 films with their crystallite basal planes parallel to a substrate surface (which has been suggested to be the low friction orientation), the active sites must be removed from the substrate by, for instance, heating in vacuum.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 1 , February 1989 , pp. 180 - 184
Copyright
Copyright © Materials Research Society 1989

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References

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