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Nitride formation in iron after nitrogen implantation in a nickel top layer

Published online by Cambridge University Press:  31 January 2011

D. K. Inia ,
F. D. Tichelaar ,
W. M. Arnoldbik ,
A. M. Vredenberg  and
D. O. Boerma
D. K. Inia
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands
F. D. Tichelaar
Affiliation:
National Center for HREM, Laboratory of Materials Science, Delft University of Technology, Rotterdamseweg 137, 2628 AL Delft, The Netherlands
W. M. Arnoldbik
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands
A. M. Vredenberg
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands
D. O. Boerma
Affiliation:
Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands and Department of Nuclear Solid State Physics, Materials Science Center, Groningen University, Nijenborgh 4, 9747 AG Groningen, The Netherland
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Extract

Nitrogen was introduced in an iron layer underneath a top layer of nickel. This was done by ion implantation of N into the Ni layer at a temperature of 200 °C. During implantation and subsequent anneals at 250 and 300 °C, N diffuses from the Ni layer into the Fe layer because of a larger affinity of Fe for N than of Ni for N. The concentration depth profiles of N in the Ni/Fe bilayers, as recorded with the nuclear reaction analysis technique, show at the highest implantation dose a peak below the Ni/Fe interface. From structural analysis techniques (x-ray diffraction and cross-sectional transmission electron microscopy) it was observed that this peak is due to the presence of an ε–Fe3−xN layer below the Ni/Fe interface. It is thus shown that ε –nitride can be formed in Fe at such low temperatures in the absence of radiation damage.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 2 , February 1998 , pp. 440 - 445
Copyright
Copyright © Materials Research Society 1998

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