Hostname: page-component-7bb8b95d7b-nptnm Total loading time: 0 Render date: 2024-09-18T12:19:52.626Z Has data issue: false hasContentIssue false
  • English
  • Français

Interstitial diffusion along twist grain boundaries in Cu

Published online by Cambridge University Press:  03 March 2011

Miki Nomura  and
James B. Adams
Miki Nomura
Affiliation:
Department of Materials Science and Engineering, University of Illinois, 105 S. Goodwin, Urbana, Illinois 61801
James B. Adams
Affiliation:
Department of Materials Science and Engineering, University of Illinois, 105 S. Goodwin, Urbana, Illinois 61801
Get access

Abstract

Interstitial diffusion along twist grain boundaries was studied using the Embedded Atom Method (EAM). Six (100) twist grain boundaries (8.79°–43.6°) in copper were investigated. Interstitial formation energies were found to be much lower (0.26-0.78 eV) than in the bulk, and migration energies were found to be comparable (0.01 eV-0.24 eV) to the bulk values (0.09 eV). The vacancy mechanism is favored for low angle boundaries, and the interstitial mechanism is favored for high angle boundaries. The trends in formation energy versus twist angle were partly explained in terms of the volume expansion of the grain boundary. The total diffusion rate due to both mechanisms was calculated, and agreed reasonably well with experimental data for Cu in polycrystalline Cu. The calculated diffusion rate for specific twist boundaries also agreed well with experimental measurements for Zn/Al.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 11 , November 1995 , pp. 2916 - 2924
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Kaur, I. and Gust, W., Fundamentals of Grain and Interphase Boundary Diffusion, 3rd ed. (John Wiley & Sons, New York, 1995).Google Scholar
2Balluffi, R.W., Metall. Trans. A 13A, 2069 (1982).CrossRefGoogle Scholar
3Peterson, N.L., Int. Met. Rev. 28, 65 (1983).CrossRefGoogle Scholar
4Sommer, J. and Herzig, C.J. Appl. Phys. 72, 2758 (1992).CrossRefGoogle Scholar
5Gertsriken, S.D. and Revo, A.L., Fiz. Met. Metalloved. [Phys. Met. Metallogr. (USSR)] 4, 578 (1960).Google Scholar
6Horváth, J., Birringer, R., and Gleiter, H., Solid State Commun. 62, 319 (1987).CrossRefGoogle Scholar
7Couling, S.R.L. and Smoluchowski, R., J. Appl. Phys. 25, 1538 (1954).CrossRefGoogle Scholar
8Gaust, W., Mayer, S., Bogel, A., and Predel, B, J. Phys. C4, 537 (1985).Google Scholar
9Surholt, T., Mishlin, Yu. M., and Herzig, Chr., Phys. Rev. B 50, 3577 (1994).CrossRefGoogle Scholar
10Turnbull, D. and Hoffman, R.E., Acta Metall. 2, 419 (1954).CrossRefGoogle Scholar
11Atkinson, A., J. Phys. C4, 379 (1985).Google Scholar
12Sommer, J., Herzig, Chr., Mayer, S., and Gust, W., Defect and Diffusion Forum 66–69, 843 (1989).Google Scholar
13Sommer, J., Herzig, Chr., Muschik, T., and Gust, W., Acta Metall. 43, 1099 (1995).CrossRefGoogle Scholar
14Ma, Q. and Balluffi, R.W., Acta Metall. 41, 133 (1993).CrossRefGoogle Scholar
15Canon, R. F. and Stark, J. P., J. Appl. Phys. 40, 4366 (1969).CrossRefGoogle Scholar
16Love, G. and Shewmon, P.G., Acta Metall. 2, 899 (1963).CrossRefGoogle Scholar
17Biscondi, M., in Physical Chemistry of the Solid State: Applications to Metals and Their Compounds, edited by Lacombe, P. (Elsevier, Amsterdam, 1984), p. 225.Google Scholar
18Majid, I., Bristowe, P.D., and Balluffi, R.W., Phys. Rev. B 40, 2779 (1989).CrossRefGoogle Scholar
19Wenzl, H., in Vacancies and Interstitials in Metals, edited by Seeger, A.et al. (North Holland Publishing Co., Amsterdam, 1970), p. 363.Google Scholar
20Granato, A.V., J. Phys. Chem. Solids 55, 931 (1994).CrossRefGoogle Scholar
21Foiles, S. M., Baskes, M. I., and Daw, M. S., Phys. Rev. B 33, 7983 (1986).CrossRefGoogle Scholar
22Najafabadi, R., Srolovitz, D.J., and LeSar, R., J. Mater. Res. 5, 2663 (1990).CrossRefGoogle Scholar
23Ma, Q., Liu, C., Adams, J. B., and Balluffi, R.W., Acta Metall. 41, 143 (1993).CrossRefGoogle Scholar
24Liu, C. and Plimpton, S. J., Phy. Rev. B 51, 4523 (1995).CrossRefGoogle Scholar
25Nomura, M., Lee, S-Y., and Adams, J. B., J. Mater. Res. 6, 1 (1991).CrossRefGoogle Scholar
26Nomura, M. and Adams, J.B., Int. Sci. 2, 137 (1994).Google Scholar
27Daw, M.S. and Baskes, M.I., Phys. Rev. B 29, 6443 (1984).CrossRefGoogle Scholar
28Ma, Q. and Balluffi, R. W., Acta Metall. 42, 1 (1994).CrossRefGoogle Scholar
29Zener, C., J. Appl. Phys. 22, 372 (1951).CrossRefGoogle Scholar
30Private conversation with Arthur Voter.Google Scholar
31Beke, D.L., Erdélyi, G., Gödény, I., Szabó, I.A., and Kedves, F.J., Cryst. Res. Technol. 20, 549 (1985).CrossRefGoogle Scholar